摘要
We demonstrate the advantages of femtosecond laser annealing on non-vacuum CIGS thin films. The PL spectra implied some defect-levels or band-fluctuations were eliminated, and the conversion efficiency and ideal factor were enhanced after laser annealing.
| 原文 | English |
|---|---|
| 文章編號 | JTh2A.22 |
| 期刊 | Optics InfoBase Conference Papers |
| 出版狀態 | Published - 2016 |
| 事件 | CLEO: Applications and Technology, CLEO AT 2016 - San Jose, 美國 持續時間: 5 6月 2016 → 10 6月 2016 |
指紋
深入研究「Improving Crystalline Quality of Non-Vacuum Processed Cu(In,Ga)Se2 Thin Films by Femtosecond Laser Annealing」主題。共同形成了獨特的指紋。引用此
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