摘要
We demonstrate the advantages of femtosecond laser annealing on non-vacuum CIGS thin films. The PL spectra implied some defect-levels or band-fluctuations were eliminated, and the conversion efficiency and ideal factor were enhanced after laser annealing.
原文 | English |
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文章編號 | JTh2A.22 |
期刊 | Optics InfoBase Conference Papers |
出版狀態 | Published - 2016 |
事件 | CLEO: Applications and Technology, CLEO AT 2016 - San Jose, 美國 持續時間: 5 6月 2016 → 10 6月 2016 |