Improvements on electrical characteristics of p-channel metal-oxide-semiconductor field effect transistors with HfO2 gate stacks by post deposition N2O plasma treatment

Wen Tai Lu, Chao-Hsin Chien*, Wen Ting Lan, Tsung Chieh Lee, Ming Jui Yang, Shih Wen Shen, Peer Lehnen, Tiao Yuan Huang

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    Engineering & Materials Science

    Physics & Astronomy