Improvements on electrical characteristics of p-channel metal-oxide-semiconductor field effect transistors with HfO₂ gate stacks by post deposition N₂O plasma treatment

Engineering & Materials Science

• Plasma deposition 100%
• Interface states 92%
• MOSFET devices 70%
• Plasmas 37%
• Transconductance 24%
• Leakage currents 21%
• Oxides 17%
• Degradation 14%
• Electric potential 10%

Physics & Astronomy

• metal oxide semiconductors 61%
• field effect transistors 47%
• traps 27%
• pumping 20%
• leakage 19%
• low currents 13%
• transconductance 13%
• degradation 9%
• low frequencies 8%
• oxides 7%
• estimates 7%
• electric potential 6%