Improvements of AlGaN/GaN p-i-n UV sensors with graded AlGaN layer for the UV-B (280-320 nm) detection

Su Sir Liu; Pei-Wen Li; W. H. Lan; Wen Jen Lin

doi:10.1016/j.mseb.2005.06.009

Improvements of AlGaN/GaN p-i-n UV sensors with graded AlGaN layer for the UV-B (280-320 nm) detection

Su Sir Liu, Pei-Wen Li, W. H. Lan, Wen Jen Lin

電子研究所

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

摘要

Al_xGa_1-xN/GaN p-i-n UV sensors grown by metal organic chemical vapor deposition (MOCVD) were fabricated for the UV-B (280-320 nm) detection. With a proper structure design by including a thin top p-layer and a graded Al_xGa_1-xN (x = 0.26 → 0.13) layer, the etching pit density (EPD) and the specific contact resistance of top p-layer can be significantly decreased. Device dark current density decreased from 3.5 × 10^-7 to 2.49 × 10^-11 A/cm² at -3V and the spectrum responsivity at 310 nm UV-B range is 0.04 A/W, which is much better than traditional AlGaN-based devices without graded layer design.

原文	English
頁（從 - 到）	196-200
頁數	5
期刊	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
卷	122
發行號	3
DOIs	https://doi.org/10.1016/j.mseb.2005.06.009
出版狀態	Published - 25 九月 2005

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10.1016/j.mseb.2005.06.009

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title = "Improvements of AlGaN/GaN p-i-n UV sensors with graded AlGaN layer for the UV-B (280-320 nm) detection",

abstract = "AlxGa1-xN/GaN p-i-n UV sensors grown by metal organic chemical vapor deposition (MOCVD) were fabricated for the UV-B (280-320 nm) detection. With a proper structure design by including a thin top p-layer and a graded AlxGa1-xN (x = 0.26 → 0.13) layer, the etching pit density (EPD) and the specific contact resistance of top p-layer can be significantly decreased. Device dark current density decreased from 3.5 × 10-7 to 2.49 × 10-11 A/cm2 at -3V and the spectrum responsivity at 310 nm UV-B range is 0.04 A/W, which is much better than traditional AlGaN-based devices without graded layer design.",

keywords = "Responsivity, SIMS, UV sensor",

author = "Liu, {Su Sir} and Pei-Wen Li and Lan, {W. H.} and Lin, {Wen Jen}",

year = "2005",

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T1 - Improvements of AlGaN/GaN p-i-n UV sensors with graded AlGaN layer for the UV-B (280-320 nm) detection

AU - Liu, Su Sir

AU - Li, Pei-Wen

AU - Lan, W. H.

AU - Lin, Wen Jen

PY - 2005/9/25

Y1 - 2005/9/25

N2 - AlxGa1-xN/GaN p-i-n UV sensors grown by metal organic chemical vapor deposition (MOCVD) were fabricated for the UV-B (280-320 nm) detection. With a proper structure design by including a thin top p-layer and a graded AlxGa1-xN (x = 0.26 → 0.13) layer, the etching pit density (EPD) and the specific contact resistance of top p-layer can be significantly decreased. Device dark current density decreased from 3.5 × 10-7 to 2.49 × 10-11 A/cm2 at -3V and the spectrum responsivity at 310 nm UV-B range is 0.04 A/W, which is much better than traditional AlGaN-based devices without graded layer design.

AB - AlxGa1-xN/GaN p-i-n UV sensors grown by metal organic chemical vapor deposition (MOCVD) were fabricated for the UV-B (280-320 nm) detection. With a proper structure design by including a thin top p-layer and a graded AlxGa1-xN (x = 0.26 → 0.13) layer, the etching pit density (EPD) and the specific contact resistance of top p-layer can be significantly decreased. Device dark current density decreased from 3.5 × 10-7 to 2.49 × 10-11 A/cm2 at -3V and the spectrum responsivity at 310 nm UV-B range is 0.04 A/W, which is much better than traditional AlGaN-based devices without graded layer design.

KW - Responsivity

KW - SIMS

KW - UV sensor

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DO - 10.1016/j.mseb.2005.06.009

M3 - Article

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EP - 200

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 3

ER -

Improvements of AlGaN/GaN p-i-n UV sensors with graded AlGaN layer for the UV-B (280-320 nm) detection

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