摘要
AlxGa1-xN/GaN p-i-n UV sensors grown by metal organic chemical vapor deposition (MOCVD) were fabricated for the UV-B (280-320 nm) detection. With a proper structure design by including a thin top p-layer and a graded AlxGa1-xN (x = 0.26 → 0.13) layer, the etching pit density (EPD) and the specific contact resistance of top p-layer can be significantly decreased. Device dark current density decreased from 3.5 × 10-7 to 2.49 × 10-11 A/cm2 at -3V and the spectrum responsivity at 310 nm UV-B range is 0.04 A/W, which is much better than traditional AlGaN-based devices without graded layer design.
原文 | English |
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頁(從 - 到) | 196-200 |
頁數 | 5 |
期刊 | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
卷 | 122 |
發行號 | 3 |
DOIs | |
出版狀態 | Published - 25 9月 2005 |