Improvements of AlGaN/GaN p-i-n UV sensors with graded AlGaN layer for the UV-B (280-320 nm) detection

Su Sir Liu, Pei-Wen Li, W. H. Lan, Wen Jen Lin

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

AlxGa1-xN/GaN p-i-n UV sensors grown by metal organic chemical vapor deposition (MOCVD) were fabricated for the UV-B (280-320 nm) detection. With a proper structure design by including a thin top p-layer and a graded AlxGa1-xN (x = 0.26 → 0.13) layer, the etching pit density (EPD) and the specific contact resistance of top p-layer can be significantly decreased. Device dark current density decreased from 3.5 × 10-7 to 2.49 × 10-11 A/cm2 at -3V and the spectrum responsivity at 310 nm UV-B range is 0.04 A/W, which is much better than traditional AlGaN-based devices without graded layer design.

原文English
頁(從 - 到)196-200
頁數5
期刊Materials Science and Engineering B: Solid-State Materials for Advanced Technology
122
發行號3
DOIs
出版狀態Published - 25 九月 2005

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