Improvements in the organometallic heteroepitaxy of indium phosphide directly on silicon

Keyphrases

• Epilayer 100%
• Growth Techniques 50%
• Heteroepitaxy 100%
• High Optical Quality 50%
• Indium Phosphide 100%
• Initial nucleation 50%
• InP Film 50%
• Low Pressure 50%
• Metal Organic Vapor Phase Epitaxy (MOVPE) 50%
• Nucleation Mechanism 50%
• Post-growth 50%
• Si (100) Substrate 50%
• Single Crystal 50%
• Structure-property Relationships 50%
• Thermal Annealing 50%

Material Science

• Epilayers 100%
• Film 100%
• Heteroepitaxy 100%
• Indium 100%
• Nucleation 50%
• Silicon 100%
• Single Crystal 50%
• Vapor Phase Epitaxy 50%