Improvements in the organometallic heteroepitaxy of indium phosphide directly on silicon

D. S. Wuu*, Ray-Hua Horng, K. C. Huang, M. K. Lee

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研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

Specular single-crystal InP epilayers have been grown directly on Si(100) substrates by low-pressure organometallic vapor phase epitaxy. The effects of the initial nucleation process on the structure properties of the films were investigated, and improvements in the growth technique leading to higher quality InP films are reported. The InP/Si epilayer grown under optimum conditions exhibits high optical quality compared with that of the InP homoepilayer. Post-growth thermal annealing at 780°C was also confirmed to be effective in improving the overall quality of InP-on-Si. The results presented are superior to those reported previously for InP/Si heteroepitaxy.

原文English
頁(從 - 到)236-238
頁數3
期刊Applied Physics Letters
54
發行號3
DOIs
出版狀態Published - 1 12月 1989

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