Improvements in the heteroepitaxy of GaAs on Si by incorporating a ZnSe buffer layer

M. K. Lee; Ray-Hua Horng; D. S. Wuu; P. C. Chen

doi:10.1109/IEDM.1990.237163

Improvements in the heteroepitaxy of GaAs on Si by incorporating a ZnSe buffer layer

M. K. Lee^*, Ray-Hua Horng, D. S. Wuu, P. C. Chen

^*此作品的通信作者

電子研究所

研究成果 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

Heteroepitaxy of GaAs on Si with a ZnSe interlayer by low-pressure metalorganic chemical vapor deposition is reported. The structural and electrical properties of the GaAs epilayers grown on ZnSe/Si substrates were found to be superior to those of the GaAs directly on Si. The surface dislocation density of the GaAs/ZnSe/Si film can be reduced to 2 × 10⁵ cm^-2, which is one order of magnitude lower than that of GaAs/Si. The planar Schottky diode fabricated on the GaAs/ZnSe/Si sample shows a reverse breakdown voltage as high as 30 V, whereas the diode on GaAs/Si has a breakdown voltage of about 12 V. In addition, the residual stress in the GaAs heteroepilayers calculated from photoluminescence peak shifts was 8.2 × 10⁸ dyn/cm² for the GaAs/ZnSe/Si structure, as compared to 2.7 × 10⁹ dyn/cm² for the GaAs directly on Si. This indicates that the ZnSe intermediate layer is also effective in reducing the residual stress in the GaAs film grown in Si.

原文	English
頁（從 - 到）	331-334
頁數	4
期刊	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1990.237163
出版狀態	Published - 12月 1990
事件	1990 International Electron Devices Meeting - San Francisco, CA, USA 持續時間: 9 12月 1990 → 12 12月 1990

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title = "Improvements in the heteroepitaxy of GaAs on Si by incorporating a ZnSe buffer layer",

abstract = "Heteroepitaxy of GaAs on Si with a ZnSe interlayer by low-pressure metalorganic chemical vapor deposition is reported. The structural and electrical properties of the GaAs epilayers grown on ZnSe/Si substrates were found to be superior to those of the GaAs directly on Si. The surface dislocation density of the GaAs/ZnSe/Si film can be reduced to 2 × 105 cm-2, which is one order of magnitude lower than that of GaAs/Si. The planar Schottky diode fabricated on the GaAs/ZnSe/Si sample shows a reverse breakdown voltage as high as 30 V, whereas the diode on GaAs/Si has a breakdown voltage of about 12 V. In addition, the residual stress in the GaAs heteroepilayers calculated from photoluminescence peak shifts was 8.2 × 108 dyn/cm2 for the GaAs/ZnSe/Si structure, as compared to 2.7 × 109 dyn/cm2 for the GaAs directly on Si. This indicates that the ZnSe intermediate layer is also effective in reducing the residual stress in the GaAs film grown in Si.",

author = "Lee, {M. K.} and Ray-Hua Horng and Wuu, {D. S.} and Chen, {P. C.}",

year = "1990",

month = dec,

doi = "10.1109/IEDM.1990.237163",

language = "English",

pages = "331--334",

journal = "Technical Digest - International Electron Devices Meeting",

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TY - JOUR

T1 - Improvements in the heteroepitaxy of GaAs on Si by incorporating a ZnSe buffer layer

AU - Lee, M. K.

AU - Horng, Ray-Hua

AU - Wuu, D. S.

AU - Chen, P. C.

PY - 1990/12

Y1 - 1990/12

N2 - Heteroepitaxy of GaAs on Si with a ZnSe interlayer by low-pressure metalorganic chemical vapor deposition is reported. The structural and electrical properties of the GaAs epilayers grown on ZnSe/Si substrates were found to be superior to those of the GaAs directly on Si. The surface dislocation density of the GaAs/ZnSe/Si film can be reduced to 2 × 105 cm-2, which is one order of magnitude lower than that of GaAs/Si. The planar Schottky diode fabricated on the GaAs/ZnSe/Si sample shows a reverse breakdown voltage as high as 30 V, whereas the diode on GaAs/Si has a breakdown voltage of about 12 V. In addition, the residual stress in the GaAs heteroepilayers calculated from photoluminescence peak shifts was 8.2 × 108 dyn/cm2 for the GaAs/ZnSe/Si structure, as compared to 2.7 × 109 dyn/cm2 for the GaAs directly on Si. This indicates that the ZnSe intermediate layer is also effective in reducing the residual stress in the GaAs film grown in Si.

AB - Heteroepitaxy of GaAs on Si with a ZnSe interlayer by low-pressure metalorganic chemical vapor deposition is reported. The structural and electrical properties of the GaAs epilayers grown on ZnSe/Si substrates were found to be superior to those of the GaAs directly on Si. The surface dislocation density of the GaAs/ZnSe/Si film can be reduced to 2 × 105 cm-2, which is one order of magnitude lower than that of GaAs/Si. The planar Schottky diode fabricated on the GaAs/ZnSe/Si sample shows a reverse breakdown voltage as high as 30 V, whereas the diode on GaAs/Si has a breakdown voltage of about 12 V. In addition, the residual stress in the GaAs heteroepilayers calculated from photoluminescence peak shifts was 8.2 × 108 dyn/cm2 for the GaAs/ZnSe/Si structure, as compared to 2.7 × 109 dyn/cm2 for the GaAs directly on Si. This indicates that the ZnSe intermediate layer is also effective in reducing the residual stress in the GaAs film grown in Si.

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U2 - 10.1109/IEDM.1990.237163

DO - 10.1109/IEDM.1990.237163

M3 - Conference article

AN - SCOPUS:0025578963

SN - 0163-1918

SP - 331

EP - 334

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1990 International Electron Devices Meeting

Y2 - 9 December 1990 through 12 December 1990

ER -

Improvements in the heteroepitaxy of GaAs on Si by incorporating a ZnSe buffer layer

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