Improvement on thermal stability for indium gallium zinc oxide by oxygen vacancy passivation with supercritical fluid cosolvent oxidation

Dun Bao Ruan, Po Tsun Liu*, Kai Jhih Gan, Chih Chieh Hsu, Yu Chuan Chiu, Chia Yu Lin, Simon M. Sze

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

In order to improve the thermal resistance and stability of indium gallium zinc oxide material, different oxygen vacancy passivation treatments have been carried out for comparison in this work. Through the analysis of x-ray photoelectron spectroscopy and reliable characterization at various temperatures, the internal mechanisms and physical model are well discussed. Notably, compared with other oxidation processes, the supercritical phase fluid-treated sample exhibits excellent electrical performance, high uniformity, and outstanding thermal stability by passivating more deep-located oxygen vacancy and introducing more well-bounded oxygen atom. Considering with the high-density device integration and critical heat dissipation issue, this research may provide an important reference for realizing monolithic 3D integration.

原文English
文章編號231602
期刊Applied Physics Letters
119
發行號23
DOIs
出版狀態Published - 6 12月 2021

指紋

深入研究「Improvement on thermal stability for indium gallium zinc oxide by oxygen vacancy passivation with supercritical fluid cosolvent oxidation」主題。共同形成了獨特的指紋。

引用此