Improvement on intrinsic electrical properties of low-k hydrogen silsesquioxane/copper interconnects employing deuterium plasma treatment

Po-Tsun Liu, Ting Chang Chang, Ya Liang Yang, Yi Fang Cheng, Jae Kyun Lee, Fu Yung Shih, Eric Tsai, Grace Chen, Simon M. Sze

研究成果: Article同行評審

23 引文 斯高帕斯(Scopus)

摘要

The interaction between copper interconnects and low-k hydrogen silsesquioxane (HSQ) film was investigated using a Cu/HSQ/Si metal insulation semiconductor capacitor and deuterium plasma post-treatment. Owing to serious diffusion of copper atoms in HSQ film, the degradations of dielectric properties are significant with the increase of thermal stress. The leakage current behavior in high-field conduction was well explained by the Poole-Frenkel (P-F) mechanism. By applying deuterium plasma treatment to HSQ film, however, the leakage current was decreased and P-F conduction can be suppressed. In addition, the phenomena of serious Cu penetration were not observed by means of electrical characteristic measurements and secondary ion mass spectroscopy analysis, even in the absence of diffusion barrier layers. This indicates that copper diffusion in low-k HSQ film can be effectively blocked by deuterium plasma post-treatment. Therefore, further improvement in resistance-capacitance reduction can be obtained due to the minimized thickness requirement for conventional barriers such as inorganic Si3N4 and metallic TaN layers.

原文English
頁(從 - 到)1186-1192
頁數7
期刊Journal of the Electrochemical Society
147
發行號3
DOIs
出版狀態Published - 1 3月 2000

指紋

深入研究「Improvement on intrinsic electrical properties of low-k hydrogen silsesquioxane/copper interconnects employing deuterium plasma treatment」主題。共同形成了獨特的指紋。

引用此