@inproceedings{fbc16e7b43834bf6a3f5254b1359a1a6,
title = "Improvement on CDM ESD robustness of high-voltage tolerant nLDMOS SCR devices by using differential doped gate",
abstract = "Early failure has been observed during CDM ESD stress on high-voltage tolerant nLDMOS-SCR devices in a standard low-voltage CMOS technology due to the gate oxide (GOX) degradation. In this work, we propose a special p+/n+ differential doped gate which boosts the CDM ESD failure current level with a factor of 3 to 9.",
keywords = "Electrostatic Discharge (ESD), gate oxide reliability, high-voltage tolerant (HVT) devices, laterally diffused nMOS (nLDMOS), transmission line pulsing (TLP) system, very fast TLP system (VFTLP)",
author = "Chen, {S. H.} and D. Linten and M. Scholz and G. Hellings and R. Boschke and G. Groeseneken and Huang, {Y. C.} and Ming-Dou Ker",
year = "2014",
month = jan,
day = "1",
doi = "10.1109/IRPS.2014.6860651",
language = "English",
isbn = "9781479933167",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2014 IEEE International Reliability Physics Symposium, IRPS 2014",
address = "United States",
note = "52nd IEEE International Reliability Physics Symposium, IRPS 2014 ; Conference date: 01-06-2014 Through 05-06-2014",
}