Improvement of ultra-thin 3.3 nm thick oxide for Co-salicide process using NF 3 annealed poly-gate

Tzu Yun Chang*, Tan Fu Lei, Tien-Sheng Chao, Cheng Tung Huang, Shi Kuan Chen, Andy Tuan, Steve Chou

*此作品的通信作者

研究成果: Article同行評審

摘要

To get high quality ultra-thin oxide is very important and difficult for IC industry now. Using NF3 annealed poly-Si gate to improve gate oxide integrity is described. However, reducing gate, source and drain parasitic resistance with gate lengths down to 0.2 μm is another key point. Co-salicide process can successfully reduce the gate resistance even for a gate length of 0.075 μm. Although, Co-salicide process has a leakage problem. Using NF3 annealing to prevent Co diffusing into gate oxide is described too. Results show that the optimal NF3 annealing significantly improves electrical characteristics of ultra-thin oxide and Co-salicide process in terms of leakage current and breakdown field, as compared to the samples without NF3 annealing.

原文English
頁(從 - 到)2243-2246
頁數4
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
38
發行號4 B
DOIs
出版狀態Published - 1999

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