To get high quality ultra-thin oxide is very important and difficult for IC industry now. Using NF3 annealed poly-Si gate to improve gate oxide integrity is described. However, reducing gate, source and drain parasitic resistance with gate lengths down to 0.2 μm is another key point. Co-salicide process can successfully reduce the gate resistance even for a gate length of 0.075 μm. Although, Co-salicide process has a leakage problem. Using NF3 annealing to prevent Co diffusing into gate oxide is described too. Results show that the optimal NF3 annealing significantly improves electrical characteristics of ultra-thin oxide and Co-salicide process in terms of leakage current and breakdown field, as compared to the samples without NF3 annealing.
|頁（從 - 到）||2243-2246|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 1999|