Improvement of thermal management of high-power GaN-based light-emitting diodes

Bo Hung Liou; Chih Ming Chen; Ray-Hua Horng; Yi Chen Chiang; Dong Sing Wuu

doi:10.1016/j.microrel.2011.04.002

Improvement of thermal management of high-power GaN-based light-emitting diodes

Bo Hung Liou, Chih Ming Chen^*, Ray-Hua Horng, Yi Chen Chiang, Dong Sing Wuu

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電子研究所

研究成果: Article › 同行評審

61 引文斯高帕斯（Scopus）

摘要

The thermal management of high-power light-emitting-diode (LED) devices employing various die-attach materials is analyzed. Three types of die-attach materials are tested, including silver paste, Sn-3 wt.% Ag-0.5 wt.% Cu (SAC305) solder, and SAC305 solder added with a small amount of carbon nanotubes (CNTs). The analysis of thermal management is performed by comparing the temperatures of the LED chips in use and the total thermal resistances of the LED devices obtained respectively from the thermal infrared images and thermal transient analysis. Due to the high thermal conductivity of CNT, the addition of CNTs into the SAC305 solder reduces the total thermal resistance and chip temperature of the LED device, and the thermal management of the LED devices is improved accordingly.

原文	English
頁（從 - 到）	861-865
頁數	5
期刊	Microelectronics Reliability
卷	52
發行號	5
DOIs	https://doi.org/10.1016/j.microrel.2011.04.002
出版狀態	Published - 1 5月 2012

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10.1016/j.microrel.2011.04.002

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title = "Improvement of thermal management of high-power GaN-based light-emitting diodes",

abstract = "The thermal management of high-power light-emitting-diode (LED) devices employing various die-attach materials is analyzed. Three types of die-attach materials are tested, including silver paste, Sn-3 wt.% Ag-0.5 wt.% Cu (SAC305) solder, and SAC305 solder added with a small amount of carbon nanotubes (CNTs). The analysis of thermal management is performed by comparing the temperatures of the LED chips in use and the total thermal resistances of the LED devices obtained respectively from the thermal infrared images and thermal transient analysis. Due to the high thermal conductivity of CNT, the addition of CNTs into the SAC305 solder reduces the total thermal resistance and chip temperature of the LED device, and the thermal management of the LED devices is improved accordingly.",

author = "Liou, {Bo Hung} and Chen, {Chih Ming} and Ray-Hua Horng and Chiang, {Yi Chen} and Wuu, {Dong Sing}",

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T1 - Improvement of thermal management of high-power GaN-based light-emitting diodes

AU - Liou, Bo Hung

AU - Chen, Chih Ming

AU - Horng, Ray-Hua

AU - Chiang, Yi Chen

AU - Wuu, Dong Sing

PY - 2012/5/1

Y1 - 2012/5/1

N2 - The thermal management of high-power light-emitting-diode (LED) devices employing various die-attach materials is analyzed. Three types of die-attach materials are tested, including silver paste, Sn-3 wt.% Ag-0.5 wt.% Cu (SAC305) solder, and SAC305 solder added with a small amount of carbon nanotubes (CNTs). The analysis of thermal management is performed by comparing the temperatures of the LED chips in use and the total thermal resistances of the LED devices obtained respectively from the thermal infrared images and thermal transient analysis. Due to the high thermal conductivity of CNT, the addition of CNTs into the SAC305 solder reduces the total thermal resistance and chip temperature of the LED device, and the thermal management of the LED devices is improved accordingly.

AB - The thermal management of high-power light-emitting-diode (LED) devices employing various die-attach materials is analyzed. Three types of die-attach materials are tested, including silver paste, Sn-3 wt.% Ag-0.5 wt.% Cu (SAC305) solder, and SAC305 solder added with a small amount of carbon nanotubes (CNTs). The analysis of thermal management is performed by comparing the temperatures of the LED chips in use and the total thermal resistances of the LED devices obtained respectively from the thermal infrared images and thermal transient analysis. Due to the high thermal conductivity of CNT, the addition of CNTs into the SAC305 solder reduces the total thermal resistance and chip temperature of the LED device, and the thermal management of the LED devices is improved accordingly.

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U2 - 10.1016/j.microrel.2011.04.002

DO - 10.1016/j.microrel.2011.04.002

M3 - Article

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SN - 0026-2714

VL - 52

SP - 861

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JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 5

ER -

Improvement of thermal management of high-power GaN-based light-emitting diodes

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