The improvement of the (1 1 1) texture and microstructure of Cu films on TiN/Si and TiN/SiO2 substrates by pulsed KrF laser annealing as a function of the laser energy density, the deposition method of Cu films, and the orientation of TiN substrates is studied. Upon annealing at an energy density below 1.0 J cm-2 the (1 1 1) texture of the evaporated Cu films increases with the energy density, whereas for the sputtered Cu films the (2 0 0) texture is promoted. The higher oxygen concentration in the sputtered Cu films may be responsible for the degradation of the Cu(1 1 1) texture. The enhancement of the Cu(1 1 1) texture is more evident for (1 1 1)-oriented TiN substrates than for (2 0 0)-oriented TiN substrates. The present study shows that pulsed laser annealing is superior to vacuum annealing in improving the (1 1 1) texture and microstructure of Cu films via the melt/solidification process.
|頁（從 - 到）||675-678|
|期刊||Journal of Materials Science: Materials in Electronics|
|出版狀態||Published - 1 一月 2000|