Improvement of resistive switching uniformity for Al-Zn-Sn-O-based memory device with inserting HfO2 layer

Po-Tsun Liu; Yang Shun Fan; Chun Ching Chen

doi:10.1109/LED.2014.2363491

Improvement of resistive switching uniformity for Al-Zn-Sn-O-based memory device with inserting HfO₂ layer

Po-Tsun Liu, Yang Shun Fan, Chun Ching Chen

光電工程學系

研究成果: Article › 同行評審

17 引文斯高帕斯（Scopus）

摘要

This letter demonstrates the characteristics of a resistive switching memory [resistive random access memory (RRAM)] device with a bilayer structure of aluminum-zinc-tin-oxide (AZTO) and HfO₂-film layers. As for the RRAM operation, the formation and rupture processes of the conductive filaments can be confined in the HfO₂ layer with low-concentration oxygen vacancy. The resistive switching stability and electrical uniformity of bilayer AZTO/HfO₂ RRAM device are obviously enhanced as compared with the one only with a single layer of AZTO film. In addition, a physical mechanism for uniformity improvement is proposed by the localized conduction of conducting filaments.

原文	English
文章編號	6936282
頁（從 - 到）	1233-1235
頁數	3
期刊	IEEE Electron Device Letters
卷	35
發行號	12
DOIs	https://doi.org/10.1109/LED.2014.2363491
出版狀態	Published - 12月 2014

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10.1109/LED.2014.2363491

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abstract = "This letter demonstrates the characteristics of a resistive switching memory [resistive random access memory (RRAM)] device with a bilayer structure of aluminum-zinc-tin-oxide (AZTO) and HfO2-film layers. As for the RRAM operation, the formation and rupture processes of the conductive filaments can be confined in the HfO2 layer with low-concentration oxygen vacancy. The resistive switching stability and electrical uniformity of bilayer AZTO/HfO2 RRAM device are obviously enhanced as compared with the one only with a single layer of AZTO film. In addition, a physical mechanism for uniformity improvement is proposed by the localized conduction of conducting filaments.",

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N2 - This letter demonstrates the characteristics of a resistive switching memory [resistive random access memory (RRAM)] device with a bilayer structure of aluminum-zinc-tin-oxide (AZTO) and HfO2-film layers. As for the RRAM operation, the formation and rupture processes of the conductive filaments can be confined in the HfO2 layer with low-concentration oxygen vacancy. The resistive switching stability and electrical uniformity of bilayer AZTO/HfO2 RRAM device are obviously enhanced as compared with the one only with a single layer of AZTO film. In addition, a physical mechanism for uniformity improvement is proposed by the localized conduction of conducting filaments.

AB - This letter demonstrates the characteristics of a resistive switching memory [resistive random access memory (RRAM)] device with a bilayer structure of aluminum-zinc-tin-oxide (AZTO) and HfO2-film layers. As for the RRAM operation, the formation and rupture processes of the conductive filaments can be confined in the HfO2 layer with low-concentration oxygen vacancy. The resistive switching stability and electrical uniformity of bilayer AZTO/HfO2 RRAM device are obviously enhanced as compared with the one only with a single layer of AZTO film. In addition, a physical mechanism for uniformity improvement is proposed by the localized conduction of conducting filaments.

KW - AZTO

KW - localized conducting filament.

KW - Resistive switching

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Improvement of resistive switching uniformity for Al-Zn-Sn-O-based memory device with inserting HfO2 layer

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Improvement of resistive switching uniformity for Al-Zn-Sn-O-based memory device with inserting HfO₂ layer