Improvement of resistive switching properties of Ti/ZrO2/Pt with embedded germanium

Chun An Lin, Debashis Panda, Tseung-Yuen Tseng

研究成果: Chapter同行評審

摘要

In this study, we construct the Ti/ZrO2/Ge(5nm)/ZrO2/Pt structures with various positions of embedded Ge in ZrO2 films. After depositing a Ge layer, a 600 °C rapid thermal annealing is carried out. Compared to other Ge positions, the lowest forming voltage and the most stable resistive behavior are observed in the cell with a Ge layer near the top electrode. The curve fitting of high resistance state and low resistance state shows that Schottky emission in reset process and the ionic conduction during set process. The improved switching properties could be related to the formation of Germanium oxide and the defect concentration reduction after annealing process.

原文English
主出版物標題Advances in Multifunctional Materials and Systems II - A Collection of Papers Presented at the 10th Pacific Rim Conference on Ceramic and Glass Technology, PacRim 2013
發行者wiley
頁面111-116
頁數6
ISBN(電子)9781118771402
ISBN(列印)9781118771273
DOIs
出版狀態Published - 1 1月 2014
事件10th Pacific Rim Conference on Ceramic and Glass Technology, PacRim 2013 - Coronado, CA, United States
持續時間: 2 6月 20136 6月 2013

出版系列

名字Ceramic Transactions
245
ISSN(列印)1042-1122

Conference

Conference10th Pacific Rim Conference on Ceramic and Glass Technology, PacRim 2013
國家/地區United States
城市Coronado, CA
期間2/06/136/06/13

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