@inbook{aec54b8f6f9b40728015ea178367bf47,
title = "Improvement of resistive switching properties of Ti/ZrO2/Pt with embedded germanium",
abstract = "In this study, we construct the Ti/ZrO2/Ge(5nm)/ZrO2/Pt structures with various positions of embedded Ge in ZrO2 films. After depositing a Ge layer, a 600 °C rapid thermal annealing is carried out. Compared to other Ge positions, the lowest forming voltage and the most stable resistive behavior are observed in the cell with a Ge layer near the top electrode. The curve fitting of high resistance state and low resistance state shows that Schottky emission in reset process and the ionic conduction during set process. The improved switching properties could be related to the formation of Germanium oxide and the defect concentration reduction after annealing process.",
keywords = "Embedded germanium, Forming voltage, Rapid thermal annealing, Resistive switching, Schottky emission",
author = "Lin, {Chun An} and Debashis Panda and Tseung-Yuen Tseng",
note = "Publisher Copyright: {\textcopyright} 2014 The American Ceramic Society. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.; 10th Pacific Rim Conference on Ceramic and Glass Technology, PacRim 2013 ; Conference date: 02-06-2013 Through 06-06-2013",
year = "2014",
month = jan,
day = "1",
doi = "10.1002/9781118771402.ch10",
language = "English",
isbn = "9781118771273",
series = "Ceramic Transactions",
publisher = "wiley",
pages = "111--116",
booktitle = "Advances in Multifunctional Materials and Systems II - A Collection of Papers Presented at the 10th Pacific Rim Conference on Ceramic and Glass Technology, PacRim 2013",
}