In this study, we construct the Ti/ZrO2/Ge(5nm)/ZrO2/Pt structures with various positions of embedded Ge in ZrO2 films. After depositing a Ge layer, a 600 °C rapid thermal annealing is carried out. Compared to other Ge positions, the lowest forming voltage and the most stable resistive behavior are observed in the cell with a Ge layer near the top electrode. The curve fitting of high resistance state and low resistance state shows that Schottky emission in reset process and the ionic conduction during set process. The improved switching properties could be related to the formation of Germanium oxide and the defect concentration reduction after annealing process.