Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation
Chao Sung Lai*, Tien-Sheng Chao, Tan Fu Lei, Chung Len Lee, Tiao Yuan Huang, Chun Yen Chang
*此作品的通信作者
研究成果: Article › 同行評審