Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation

Chao Sung Lai; Tien-Sheng Chao; Tan Fu Lei; Chung Len Lee; Tiao Yuan Huang; Chun Yen Chang

doi:10.1143/JJAP.37.5507

Improvement of reliability of metal-oxide semiconductor field-effect transistors with N₂O nitrided gate oxide and N₂O polysilicon gate reoxidation

Chao Sung Lai^*, Tien-Sheng Chao, Tan Fu Lei, Chung Len Lee, Tiao Yuan Huang, Chun Yen Chang

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

摘要

A systematic study of the impact of the reliability of metal-oxide semiconductor field-effect transistors (MOSFETs) with N₂O nitrided gate oxides and N₂O poly-reoxidation was conducted. The improvements include hot carrier immunity, suppression of reverse short channel effect and suppression of plasma-induced degradation. These improvements are due to nitrogen incorporation at the oxide/Si-substrate interface. All data presented in this study involve substantially low thermal budget (850°C), making this N₂O-related technology extremely attractive and promising for future scaled devices.

原文	English
頁（從 - 到）	5507-5509
頁數	3
期刊	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
卷	37
發行號	10
DOIs	https://doi.org/10.1143/JJAP.37.5507
出版狀態	Published - 10月 1998

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Lai, C. S., Chao, T.-S., Lei, T. F., Lee, C. L., Huang, T. Y., & Chang, C. Y. (1998). Improvement of reliability of metal-oxide semiconductor field-effect transistors with N₂O nitrided gate oxide and N₂O polysilicon gate reoxidation. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 37(10), 5507-5509. https://doi.org/10.1143/JJAP.37.5507

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title = "Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation",

abstract = "A systematic study of the impact of the reliability of metal-oxide semiconductor field-effect transistors (MOSFETs) with N2O nitrided gate oxides and N2O poly-reoxidation was conducted. The improvements include hot carrier immunity, suppression of reverse short channel effect and suppression of plasma-induced degradation. These improvements are due to nitrogen incorporation at the oxide/Si-substrate interface. All data presented in this study involve substantially low thermal budget (850°C), making this N2O-related technology extremely attractive and promising for future scaled devices.",

keywords = "Antenna effect, NO, Polysilicon gate reoxidation, Reverse short channel effect",

author = "Lai, {Chao Sung} and Tien-Sheng Chao and Lei, {Tan Fu} and Lee, {Chung Len} and Huang, {Tiao Yuan} and Chang, {Chun Yen}",

year = "1998",

month = oct,

doi = "10.1143/JJAP.37.5507",

language = "English",

volume = "37",

pages = "5507--5509",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "10",

}

Lai, CS, Chao, T-S, Lei, TF, Lee, CL, Huang, TY & Chang, CY 1998, 'Improvement of reliability of metal-oxide semiconductor field-effect transistors with N₂O nitrided gate oxide and N₂O polysilicon gate reoxidation', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 卷 37, 編號 10, 頁 5507-5509. https://doi.org/10.1143/JJAP.37.5507

Improvement of reliability of metal-oxide semiconductor field-effect transistors with N₂O nitrided gate oxide and N₂O polysilicon gate reoxidation. / Lai, Chao Sung; Chao, Tien-Sheng; Lei, Tan Fu 等.
於: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 卷 37, 編號 10, 10.1998, p. 5507-5509.

研究成果: Article › 同行評審

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T1 - Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation

AU - Lai, Chao Sung

AU - Chao, Tien-Sheng

AU - Lei, Tan Fu

AU - Lee, Chung Len

AU - Huang, Tiao Yuan

AU - Chang, Chun Yen

PY - 1998/10

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N2 - A systematic study of the impact of the reliability of metal-oxide semiconductor field-effect transistors (MOSFETs) with N2O nitrided gate oxides and N2O poly-reoxidation was conducted. The improvements include hot carrier immunity, suppression of reverse short channel effect and suppression of plasma-induced degradation. These improvements are due to nitrogen incorporation at the oxide/Si-substrate interface. All data presented in this study involve substantially low thermal budget (850°C), making this N2O-related technology extremely attractive and promising for future scaled devices.

AB - A systematic study of the impact of the reliability of metal-oxide semiconductor field-effect transistors (MOSFETs) with N2O nitrided gate oxides and N2O poly-reoxidation was conducted. The improvements include hot carrier immunity, suppression of reverse short channel effect and suppression of plasma-induced degradation. These improvements are due to nitrogen incorporation at the oxide/Si-substrate interface. All data presented in this study involve substantially low thermal budget (850°C), making this N2O-related technology extremely attractive and promising for future scaled devices.

KW - Antenna effect

KW - NO

KW - Polysilicon gate reoxidation

KW - Reverse short channel effect

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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ER -

Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation

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Improvement of reliability of metal-oxide semiconductor field-effect transistors with N₂O nitrided gate oxide and N₂O polysilicon gate reoxidation