A systematic study of the impact of the reliability of metal-oxide semiconductor field-effect transistors (MOSFETs) with N2O nitrided gate oxides and N2O poly-reoxidation was conducted. The improvements include hot carrier immunity, suppression of reverse short channel effect and suppression of plasma-induced degradation. These improvements are due to nitrogen incorporation at the oxide/Si-substrate interface. All data presented in this study involve substantially low thermal budget (850°C), making this N2O-related technology extremely attractive and promising for future scaled devices.
|頁（從 - 到）||5507-5509|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 10月 1998|