Improvement of polysilicon oxide integrity using NF3-annealing

Wen Luh Yang; Ming Sun Shieh; Yu Min Chen; Tien-Sheng Chao; Don Gey Liu; Tan Fu Lei

doi:10.1143/JJAP.39.L562

Improvement of polysilicon oxide integrity using NF₃-annealing

Wen Luh Yang^*, Ming Sun Shieh, Yu Min Chen, Tien-Sheng Chao, Don Gey Liu, Tan Fu Lei

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

A new method that uses NF₃-annealing improves the polysilicon oxide integrity. By using optimized NF₃ flow-rate, the method provides the advantages of both N and F simultaneously by incorporating stronger Si-N and Si-F bonds at the polysilicon/polyoxide interface. Significant improvements in terms of roughness, breakdown strength, charge-to-breakdown, and stress-induced leakage current have been demonstrated.

原文	English
頁（從 - 到）	L562-L563
期刊	Japanese Journal of Applied Physics, Part 2: Letters
卷	39
發行號	6 B
DOIs	https://doi.org/10.1143/JJAP.39.L562
出版狀態	Published - 15 6月 2000

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10.1143/JJAP.39.L562

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AU - Liu, Don Gey

AU - Lei, Tan Fu

PY - 2000/6/15

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AB - A new method that uses NF3-annealing improves the polysilicon oxide integrity. By using optimized NF3 flow-rate, the method provides the advantages of both N and F simultaneously by incorporating stronger Si-N and Si-F bonds at the polysilicon/polyoxide interface. Significant improvements in terms of roughness, breakdown strength, charge-to-breakdown, and stress-induced leakage current have been demonstrated.

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Improvement of polysilicon oxide integrity using NF3-annealing

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Improvement of polysilicon oxide integrity using NF₃-annealing