A new method that uses NF3-annealing improves the polysilicon oxide integrity. By using optimized NF3 flow-rate, the method provides the advantages of both N and F simultaneously by incorporating stronger Si-N and Si-F bonds at the polysilicon/polyoxide interface. Significant improvements in terms of roughness, breakdown strength, charge-to-breakdown, and stress-induced leakage current have been demonstrated.
|頁（從 - 到）||L562-L563|
|期刊||Japanese Journal of Applied Physics, Part 2: Letters|
|出版狀態||Published - 15 6月 2000|