Improvement of polysilicon oxide integrity using NF3-annealing

Wen Luh Yang*, Ming Sun Shieh, Yu Min Chen, Tien-Sheng Chao, Don Gey Liu, Tan Fu Lei

*此作品的通信作者

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

A new method that uses NF3-annealing improves the polysilicon oxide integrity. By using optimized NF3 flow-rate, the method provides the advantages of both N and F simultaneously by incorporating stronger Si-N and Si-F bonds at the polysilicon/polyoxide interface. Significant improvements in terms of roughness, breakdown strength, charge-to-breakdown, and stress-induced leakage current have been demonstrated.

原文English
頁(從 - 到)L562-L563
期刊Japanese Journal of Applied Physics, Part 2: Letters
39
發行號6 B
DOIs
出版狀態Published - 15 6月 2000

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