Improvement of polysilicon oxide by growing on polished polysilicon film

Tan Fu Lei; Juing Yi Cheng; Shyh Yin Shiau; Tien-Sheng Chao; Chao Sung Lai

doi:10.1109/55.585353

Improvement of polysilicon oxide by growing on polished polysilicon film

Tan Fu Lei^*, Juing Yi Cheng, Shyh Yin Shiau, Tien-Sheng Chao, Chao Sung Lai

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

16 引文斯高帕斯（Scopus）

摘要

This letter first reports the characteristics of polyoxide that was thermally grown on polished polysilicon film. Compared to conventional polyoxide, polyoxide grown on polished polysilicon film exhibits lower leakage current, higher dielectric breakdown field, larger effective barrier height, and higher charge-to-breakdown. This simple and well-operated process provides a very promising option for the interpolysilicon oxide.

原文	English
頁（從 - 到）	270-271
頁數	2
期刊	IEEE Electron Device Letters
卷	18
發行號	6
DOIs	https://doi.org/10.1109/55.585353
出版狀態	Published - 1 6月 1997

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abstract = "This letter first reports the characteristics of polyoxide that was thermally grown on polished polysilicon film. Compared to conventional polyoxide, polyoxide grown on polished polysilicon film exhibits lower leakage current, higher dielectric breakdown field, larger effective barrier height, and higher charge-to-breakdown. This simple and well-operated process provides a very promising option for the interpolysilicon oxide.",

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AU - Lai, Chao Sung

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AB - This letter first reports the characteristics of polyoxide that was thermally grown on polished polysilicon film. Compared to conventional polyoxide, polyoxide grown on polished polysilicon film exhibits lower leakage current, higher dielectric breakdown field, larger effective barrier height, and higher charge-to-breakdown. This simple and well-operated process provides a very promising option for the interpolysilicon oxide.

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Improvement of polysilicon oxide by growing on polished polysilicon film

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