Improvement of polysilicon oxide by growing on polished polysilicon film

Tan Fu Lei*, Juing Yi Cheng, Shyh Yin Shiau, Tien-Sheng Chao, Chao Sung Lai

*此作品的通信作者

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

This letter first reports the characteristics of polyoxide that was thermally grown on polished polysilicon film. Compared to conventional polyoxide, polyoxide grown on polished polysilicon film exhibits lower leakage current, higher dielectric breakdown field, larger effective barrier height, and higher charge-to-breakdown. This simple and well-operated process provides a very promising option for the interpolysilicon oxide.

原文English
頁(從 - 到)270-271
頁數2
期刊IEEE Electron Device Letters
18
發行號6
DOIs
出版狀態Published - 1 6月 1997

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