Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers

Cheng-Huang Kuo*, C. M. Chen, C. W. Kuo, C. J. Tun, C. J. Pan, B. J. Pong, G. C. Chi

*此作品的通信作者

研究成果: Article同行評審

22 引文 斯高帕斯(Scopus)

摘要

The authors have demonstrated nitride-based near-ultraviolet (NUV) light emitting diodes (LEDs) with mesh indium tin oxide (ITO) contact layer. With 20 mA injection current, it was found that forward voltages were 3.94 and 4.05 V while the output powers were 7.54 and 9.02 mW for the planar ITO LED and mesh ITO LED, respectively. The larger LED output power should be attributed partially to the reduced absorption of ITO in the NUV region and partially to the better current spreading.

原文English
文章編號201104
期刊Applied Physics Letters
89
發行號20
DOIs
出版狀態Published - 23 十一月 2006

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