Improvement of low-temperature gate dielectric formed in N 2 O plasma by an additional CF 4 pretreatment process

Tzu Yun Chang*, Tan Fu Lei, Tien-Sheng Chao, Huang Chun Wen, Hsiao Wei Chen

*此作品的通信作者

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

This study describes a novel technique to form low temperature oxide (<350°C). Low-temperature oxides were formed by N 2 O plasma in the plasma-enhanced chemical vapor deposition (PECVD) system with a CF 4 pretreatment. These oxides demonstrate excellent current-voltage (I-V) characteristics comparable to thermally grown oxides. Experimental results indicate that CF 4 plasma treatment can significantly improve the reliability of low-temperature oxides. With excellent electrical properties, the technique is highly promising for low-temperature processes.

原文English
頁(從 - 到)389-391
頁數3
期刊IEEE Electron Device Letters
23
發行號7
DOIs
出版狀態Published - 1 7月 2002

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