Improvement of junction leakage of nickel silicided junction by a Ti-capping layer

Tuo-Hung Hou; Tan Fu Lei; Tien-Sheng Chao

doi:10.1109/55.798047

Improvement of junction leakage of nickel silicided junction by a Ti-capping layer

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55 引文斯高帕斯（Scopus）

摘要

A novel NiSi process with a thin Ti-cap layer is proposed, for the first time, to improve the leakage problem of Ni-silicided junction. The Ti-cap samples exhibit a very low leakage current density about 1×10^-9 A/cm² after 600 °C annealing, which is one order of magnitude reduction comparing with uncapped samples. From Auger analyzes, it is found that this significant improvement results from suppression of the oxidation of the Ni-silicide during the thermal annealing process.

原文	English
頁（從 - 到）	572-573
頁數	2
期刊	Ieee Electron Device Letters
卷	20
發行號	11
DOIs	https://doi.org/10.1109/55.798047
出版狀態	Published - 11月 1999

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abstract = "A novel NiSi process with a thin Ti-cap layer is proposed, for the first time, to improve the leakage problem of Ni-silicided junction. The Ti-cap samples exhibit a very low leakage current density about 1×10-9 A/cm2 after 600 °C annealing, which is one order of magnitude reduction comparing with uncapped samples. From Auger analyzes, it is found that this significant improvement results from suppression of the oxidation of the Ni-silicide during the thermal annealing process.",

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AB - A novel NiSi process with a thin Ti-cap layer is proposed, for the first time, to improve the leakage problem of Ni-silicided junction. The Ti-cap samples exhibit a very low leakage current density about 1×10-9 A/cm2 after 600 °C annealing, which is one order of magnitude reduction comparing with uncapped samples. From Auger analyzes, it is found that this significant improvement results from suppression of the oxidation of the Ni-silicide during the thermal annealing process.

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Improvement of junction leakage of nickel silicided junction by a Ti-capping layer

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