Improvement of junction leakage of nickel silicided junction by a Ti-capping layer

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55 引文 斯高帕斯(Scopus)

摘要

A novel NiSi process with a thin Ti-cap layer is proposed, for the first time, to improve the leakage problem of Ni-silicided junction. The Ti-cap samples exhibit a very low leakage current density about 1×10-9 A/cm2 after 600 °C annealing, which is one order of magnitude reduction comparing with uncapped samples. From Auger analyzes, it is found that this significant improvement results from suppression of the oxidation of the Ni-silicide during the thermal annealing process.

原文English
頁(從 - 到)572-573
頁數2
期刊IEEE Electron Device Letters
20
發行號11
DOIs
出版狀態Published - 1 十一月 1999

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