Improvement of junction leakage of nickel silicided junction by a Ti-capping layer

Tuo-Hung Hou; Tan Fu Lei; Tien-Sheng Chao

doi:10.1109/55.798047

Improvement of junction leakage of nickel silicided junction by a Ti-capping layer

Tuo-Hung Hou, Tan Fu Lei, Tien-Sheng Chao

研究成果: Article › 同行評審

55 引文斯高帕斯（Scopus）

摘要

A novel NiSi process with a thin Ti-cap layer is proposed, for the first time, to improve the leakage problem of Ni-silicided junction. The Ti-cap samples exhibit a very low leakage current density about 1×10^-9 A/cm² after 600 °C annealing, which is one order of magnitude reduction comparing with uncapped samples. From Auger analyzes, it is found that this significant improvement results from suppression of the oxidation of the Ni-silicide during the thermal annealing process.

原文	English
頁（從 - 到）	572-573
頁數	2
期刊	Ieee Electron Device Letters
卷	20
發行號	11
DOIs	https://doi.org/10.1109/55.798047
出版狀態	Published - 11月 1999

存取文件

10.1109/55.798047

其它文件與鏈接

Link to publication in Scopus

引用此

@article{3df87371aaf3479ba4337d5097e1721c,

title = "Improvement of junction leakage of nickel silicided junction by a Ti-capping layer",

abstract = "A novel NiSi process with a thin Ti-cap layer is proposed, for the first time, to improve the leakage problem of Ni-silicided junction. The Ti-cap samples exhibit a very low leakage current density about 1×10-9 A/cm2 after 600 °C annealing, which is one order of magnitude reduction comparing with uncapped samples. From Auger analyzes, it is found that this significant improvement results from suppression of the oxidation of the Ni-silicide during the thermal annealing process.",

author = "Tuo-Hung Hou and Lei, {Tan Fu} and Tien-Sheng Chao",

year = "1999",

month = nov,

doi = "10.1109/55.798047",

language = "English",

volume = "20",

pages = "572--573",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - Improvement of junction leakage of nickel silicided junction by a Ti-capping layer

AU - Hou, Tuo-Hung

AU - Lei, Tan Fu

AU - Chao, Tien-Sheng

PY - 1999/11

Y1 - 1999/11

N2 - A novel NiSi process with a thin Ti-cap layer is proposed, for the first time, to improve the leakage problem of Ni-silicided junction. The Ti-cap samples exhibit a very low leakage current density about 1×10-9 A/cm2 after 600 °C annealing, which is one order of magnitude reduction comparing with uncapped samples. From Auger analyzes, it is found that this significant improvement results from suppression of the oxidation of the Ni-silicide during the thermal annealing process.

AB - A novel NiSi process with a thin Ti-cap layer is proposed, for the first time, to improve the leakage problem of Ni-silicided junction. The Ti-cap samples exhibit a very low leakage current density about 1×10-9 A/cm2 after 600 °C annealing, which is one order of magnitude reduction comparing with uncapped samples. From Auger analyzes, it is found that this significant improvement results from suppression of the oxidation of the Ni-silicide during the thermal annealing process.

UR - http://www.scopus.com/inward/record.url?scp=0033221806&partnerID=8YFLogxK

U2 - 10.1109/55.798047

DO - 10.1109/55.798047

M3 - Article

AN - SCOPUS:0033221806

SN - 0741-3106

VL - 20

SP - 572

EP - 573

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 11

ER -

Improvement of junction leakage of nickel silicided junction by a Ti-capping layer

摘要

存取文件

其它文件與鏈接

指紋

引用此