Improvement of indium-tin oxide films on polyethylene terephthalate substrates using hot-wire surface treatment

Dong Sing Wuu; Shui Yang Lien; Hsin Yuan Mao; Jui Hao Wang; Bing Rui Wu; Pin Chuan Yao; In Cha Hsieh; Hsin Han Peng; Ray-Hua Horng; Yuan Chou Chuang

doi:10.1016/j.tsf.2005.07.147

Improvement of indium-tin oxide films on polyethylene terephthalate substrates using hot-wire surface treatment

Dong Sing Wuu^*, Shui Yang Lien, Hsin Yuan Mao, Jui Hao Wang, Bing Rui Wu, Pin Chuan Yao, In Cha Hsieh, Hsin Han Peng, Ray-Hua Horng, Yuan Chou Chuang

^*此作品的通信作者

電子研究所

研究成果 › 同行評審

8 引文斯高帕斯（Scopus）

摘要

Indium-tin oxide (ITO) thin films have been studied extensively in flat panel displays because they combine unique transparent and conducting properties. A continuous roll-to-roll sputter system was used to deposit ITO/SiO₂ thin films on polyethylene terephthalate (PET) substrates with no intentional heating. Typical transmittance and resistivity of the ITO/SiO₂/PET sample were 78% (400∼700 nm) and 7.5 × 10 ^- ³ Ω cm, respectively. Changes in the characteristics of ITO/SiO₂/PET after hot-wire surface treatment in oxygen were examined in terms of resistivity, transmittance, surface roughness and bond configuration. The effects of process parameters like iridium wire temperature, chamber pressure and process duration on the properties of the ITO films are studied in details and compared with the works by plasma or furnace annealing. Under optimum conditions, the resistivity of the ITO/SiO ₂/PET sample can achieve a minimum value of 1 × 10^- ³ Ω cm with a transmittance of 82%. These results indicate that the hot-wire system can be utilized to realize better quality film and to overcome the technological limits imposed by the role-to-role sputtering conditions.

原文	English
頁（從 - 到）	346-349
頁數	4
期刊	Thin Solid Films
卷	501
發行號	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.07.147
出版狀態	Published - 20 4月 2006
事件	Proceedings of the Third International Conference on Hot-Wire - 持續時間: 23 8月 2004 → 27 8月 2004

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title = "Improvement of indium-tin oxide films on polyethylene terephthalate substrates using hot-wire surface treatment",

abstract = "Indium-tin oxide (ITO) thin films have been studied extensively in flat panel displays because they combine unique transparent and conducting properties. A continuous roll-to-roll sputter system was used to deposit ITO/SiO2 thin films on polyethylene terephthalate (PET) substrates with no intentional heating. Typical transmittance and resistivity of the ITO/SiO2/PET sample were 78% (400∼700 nm) and 7.5 × 10 - 3 Ω cm, respectively. Changes in the characteristics of ITO/SiO2/PET after hot-wire surface treatment in oxygen were examined in terms of resistivity, transmittance, surface roughness and bond configuration. The effects of process parameters like iridium wire temperature, chamber pressure and process duration on the properties of the ITO films are studied in details and compared with the works by plasma or furnace annealing. Under optimum conditions, the resistivity of the ITO/SiO 2/PET sample can achieve a minimum value of 1 × 10- 3 Ω cm with a transmittance of 82%. These results indicate that the hot-wire system can be utilized to realize better quality film and to overcome the technological limits imposed by the role-to-role sputtering conditions.",

keywords = "Hot-wire, Indium-tin oxide, Resistivity, Surface modification",

author = "Wuu, {Dong Sing} and Lien, {Shui Yang} and Mao, {Hsin Yuan} and Wang, {Jui Hao} and Wu, {Bing Rui} and Yao, {Pin Chuan} and Hsieh, {In Cha} and Peng, {Hsin Han} and Ray-Hua Horng and Chuang, {Yuan Chou}",

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TY - JOUR

T1 - Improvement of indium-tin oxide films on polyethylene terephthalate substrates using hot-wire surface treatment

AU - Wuu, Dong Sing

AU - Lien, Shui Yang

AU - Mao, Hsin Yuan

AU - Wang, Jui Hao

AU - Wu, Bing Rui

AU - Yao, Pin Chuan

AU - Hsieh, In Cha

AU - Peng, Hsin Han

AU - Horng, Ray-Hua

AU - Chuang, Yuan Chou

PY - 2006/4/20

Y1 - 2006/4/20

N2 - Indium-tin oxide (ITO) thin films have been studied extensively in flat panel displays because they combine unique transparent and conducting properties. A continuous roll-to-roll sputter system was used to deposit ITO/SiO2 thin films on polyethylene terephthalate (PET) substrates with no intentional heating. Typical transmittance and resistivity of the ITO/SiO2/PET sample were 78% (400∼700 nm) and 7.5 × 10 - 3 Ω cm, respectively. Changes in the characteristics of ITO/SiO2/PET after hot-wire surface treatment in oxygen were examined in terms of resistivity, transmittance, surface roughness and bond configuration. The effects of process parameters like iridium wire temperature, chamber pressure and process duration on the properties of the ITO films are studied in details and compared with the works by plasma or furnace annealing. Under optimum conditions, the resistivity of the ITO/SiO 2/PET sample can achieve a minimum value of 1 × 10- 3 Ω cm with a transmittance of 82%. These results indicate that the hot-wire system can be utilized to realize better quality film and to overcome the technological limits imposed by the role-to-role sputtering conditions.

AB - Indium-tin oxide (ITO) thin films have been studied extensively in flat panel displays because they combine unique transparent and conducting properties. A continuous roll-to-roll sputter system was used to deposit ITO/SiO2 thin films on polyethylene terephthalate (PET) substrates with no intentional heating. Typical transmittance and resistivity of the ITO/SiO2/PET sample were 78% (400∼700 nm) and 7.5 × 10 - 3 Ω cm, respectively. Changes in the characteristics of ITO/SiO2/PET after hot-wire surface treatment in oxygen were examined in terms of resistivity, transmittance, surface roughness and bond configuration. The effects of process parameters like iridium wire temperature, chamber pressure and process duration on the properties of the ITO films are studied in details and compared with the works by plasma or furnace annealing. Under optimum conditions, the resistivity of the ITO/SiO 2/PET sample can achieve a minimum value of 1 × 10- 3 Ω cm with a transmittance of 82%. These results indicate that the hot-wire system can be utilized to realize better quality film and to overcome the technological limits imposed by the role-to-role sputtering conditions.

KW - Hot-wire

KW - Indium-tin oxide

KW - Resistivity

KW - Surface modification

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DO - 10.1016/j.tsf.2005.07.147

M3 - Conference article

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T2 - Proceedings of the Third International Conference on Hot-Wire

Y2 - 23 August 2004 through 27 August 2004

ER -

Improvement of indium-tin oxide films on polyethylene terephthalate substrates using hot-wire surface treatment

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