Improvement of hydrogenated amorphous-silicon TFT performances with low-κ siloxane-based hydrogen silsesquioxane (HSQ) passivation layer

Keyphrases

• Hydrogenated Amorphous Silicon 100%
• Passivation Layer 100%
• Amorphous Silicon TFT 100%
• Hydrogen Silsesquioxane 100%
• Siloxane 100%
• A-Si 40%
• H TFT 40%
• Passivated 40%
• Silicon Nitride 20%
• Hydrogen Bonds (H-bonds) 20%
• Passivation 20%
• Density of States 20%
• Low Dielectric Constant 20%
• Liquid Crystal Display 20%
• Subthreshold Swing 20%
• Bottom Gate 20%
• Hydrogenated Amorphous Silicon Thin Film 20%
• Amorphous Silicon Thin-film Transistors 20%
• Aperture Ratio 20%
• Field-effect Mobility 20%
• Backchannel 20%
• Planarization 20%
• SiNx 20%
• Channel Layer 20%
• Hydrogen Incorporation 20%
• Light Transmittance 20%

Material Science

• Amorphous Silicon 100%
• Silsesquioxane 100%
• Density 20%
• Film 20%
• Hydrogen Bonding 20%
• Silicon Nitride 20%
• Thin-Film Transistor 20%
• Permittivity 20%
• Liquid Crystal Display 20%