Improvement of hydrogenated amorphous-silicon TFT performances with low-κ siloxane-based hydrogen silsesquioxane (HSQ) passivation layer

Ta Shan Chang; Ting Chang Chang; Po-Tsun Liu; Tien Shan Chang; Chun Hao Tu; Feng Sheng Yeh

doi:10.1109/LED.2006.884721

Improvement of hydrogenated amorphous-silicon TFT performances with low-κ siloxane-based hydrogen silsesquioxane (HSQ) passivation layer

Ta Shan Chang, Ting Chang Chang, Po-Tsun Liu, Tien Shan Chang, Chun Hao Tu, Feng Sheng Yeh

光電工程學系

研究成果: Article › 同行評審

21 引文斯高帕斯（Scopus）

摘要

A low-dielectric-constant (low-κ)-material siloxanebased hydrogen silsesquioxane (HSQ) is investigated as a passivation layer in bottom-gate hydrogenated amorphous-silicon thin-film transistors (a-Si: H TFTs). The low-κ HSQ film passivated on TFT promotes the brightness and aperture ratio of TFT liquid-crystal display due to its high light transmittance and good planarization. In addition, the performance of a-Si: H TFT with HSQ passivation has been improved, compared to a conventional silicon nitride (SiN_x)-passivated TFT because the hydrogen bonds of HSQ assist the hydrogen incorporation to eliminate the density of states between the back channel and passivation layer. Experimental results exhibit an improved field-effect mobility of 0.57 cm²/V · s and a subthreshold swing of 0.68 V.

原文	English
頁（從 - 到）	902-904
頁數	3
期刊	IEEE Electron Device Letters
卷	27
發行號	11
DOIs	https://doi.org/10.1109/LED.2006.884721
出版狀態	Published - 1 11月 2006

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10.1109/LED.2006.884721

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@article{641b8982493c4e9aae215fc45c6b53f8,

title = "Improvement of hydrogenated amorphous-silicon TFT performances with low-κ siloxane-based hydrogen silsesquioxane (HSQ) passivation layer",

abstract = "A low-dielectric-constant (low-κ)-material siloxanebased hydrogen silsesquioxane (HSQ) is investigated as a passivation layer in bottom-gate hydrogenated amorphous-silicon thin-film transistors (a-Si: H TFTs). The low-κ HSQ film passivated on TFT promotes the brightness and aperture ratio of TFT liquid-crystal display due to its high light transmittance and good planarization. In addition, the performance of a-Si: H TFT with HSQ passivation has been improved, compared to a conventional silicon nitride (SiNx)-passivated TFT because the hydrogen bonds of HSQ assist the hydrogen incorporation to eliminate the density of states between the back channel and passivation layer. Experimental results exhibit an improved field-effect mobility of 0.57 cm2/V · s and a subthreshold swing of 0.68 V.",

keywords = "Low-dielectric constant, Passivation, Thin-film transistor (TFT)",

author = "Chang, {Ta Shan} and Chang, {Ting Chang} and Po-Tsun Liu and Chang, {Tien Shan} and Tu, {Chun Hao} and Yeh, {Feng Sheng}",

year = "2006",

month = nov,

day = "1",

doi = "10.1109/LED.2006.884721",

language = "English",

volume = "27",

pages = "902--904",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - Improvement of hydrogenated amorphous-silicon TFT performances with low-κ siloxane-based hydrogen silsesquioxane (HSQ) passivation layer

AU - Chang, Ta Shan

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Chang, Tien Shan

AU - Tu, Chun Hao

AU - Yeh, Feng Sheng

PY - 2006/11/1

Y1 - 2006/11/1

N2 - A low-dielectric-constant (low-κ)-material siloxanebased hydrogen silsesquioxane (HSQ) is investigated as a passivation layer in bottom-gate hydrogenated amorphous-silicon thin-film transistors (a-Si: H TFTs). The low-κ HSQ film passivated on TFT promotes the brightness and aperture ratio of TFT liquid-crystal display due to its high light transmittance and good planarization. In addition, the performance of a-Si: H TFT with HSQ passivation has been improved, compared to a conventional silicon nitride (SiNx)-passivated TFT because the hydrogen bonds of HSQ assist the hydrogen incorporation to eliminate the density of states between the back channel and passivation layer. Experimental results exhibit an improved field-effect mobility of 0.57 cm2/V · s and a subthreshold swing of 0.68 V.

AB - A low-dielectric-constant (low-κ)-material siloxanebased hydrogen silsesquioxane (HSQ) is investigated as a passivation layer in bottom-gate hydrogenated amorphous-silicon thin-film transistors (a-Si: H TFTs). The low-κ HSQ film passivated on TFT promotes the brightness and aperture ratio of TFT liquid-crystal display due to its high light transmittance and good planarization. In addition, the performance of a-Si: H TFT with HSQ passivation has been improved, compared to a conventional silicon nitride (SiNx)-passivated TFT because the hydrogen bonds of HSQ assist the hydrogen incorporation to eliminate the density of states between the back channel and passivation layer. Experimental results exhibit an improved field-effect mobility of 0.57 cm2/V · s and a subthreshold swing of 0.68 V.

KW - Low-dielectric constant

KW - Passivation

KW - Thin-film transistor (TFT)

UR - http://www.scopus.com/inward/record.url?scp=33750502434&partnerID=8YFLogxK

U2 - 10.1109/LED.2006.884721

DO - 10.1109/LED.2006.884721

M3 - Article

AN - SCOPUS:33750502434

SN - 0741-3106

VL - 27

SP - 902

EP - 904

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

ER -

Improvement of hydrogenated amorphous-silicon TFT performances with low-κ siloxane-based hydrogen silsesquioxane (HSQ) passivation layer

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