High-speed vertical-cavity surface-emitting lasers that could be modulated up to 10 Giga-bit-per-second (Gbps) were accomplished by using additional proton implantation to reduce the parasitic capacitance. The eye diagram of the implanted device shows a noticeable improvement when compared with those devices without implantation. In contrast to previous reports, moreover, the output power-current-voltage (L-I-V) characteristics of the fabricated devices in this study show excellent consistency between before and after implantation. The high-temperature lifetime of devices fabricated with a similar process has already exceeded 8100 h up to the present day.
|頁（從 - 到）
|Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
|Published - 4月 2004