Improvement of high-speed oxide-confined vertical-cavity surface-emitting lasers

Hsin-Chieh Yu*, Shoou Jinn Chang, Yan Kuin Su, Chia Pin Sung, Hong Pin Yang, Chun Yuan Huang, Yu Wei Lin, Jin Mei Wang, Fang I. Lai, Hao-Chung Kuo

*此作品的通信作者

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

High-speed vertical-cavity surface-emitting lasers that could be modulated up to 10 Giga-bit-per-second (Gbps) were accomplished by using additional proton implantation to reduce the parasitic capacitance. The eye diagram of the implanted device shows a noticeable improvement when compared with those devices without implantation. In contrast to previous reports, moreover, the output power-current-voltage (L-I-V) characteristics of the fabricated devices in this study show excellent consistency between before and after implantation. The high-temperature lifetime of devices fabricated with a similar process has already exceeded 8100 h up to the present day.

原文English
頁(從 - 到)1947-1950
頁數4
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
43
發行號4 B
DOIs
出版狀態Published - 4月 2004

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