Improvement of GaN-based LED with SiO2 photonic crystal on an ITO film by holographic lithography

H. H. Yen, Hao-Chung Kuo, W. Y. Yeh

研究成果: Conference article同行評審

10 引文 斯高帕斯(Scopus)

摘要

GaN-based light-emitting diode (LED) with SiO2 photonic crystals (PCs) structure made by holographic lithography on an indium-tin-oxide (ITO) film was fabricated. The PCs made on SiO2 but an ITO film both improves the light extraction efficiency of the GaN-based LED and prevents the sheet resistance increasing of the ITO film from the dry etching damage. It was found that the forward voltage at 20 mA of the GaN-based LED with SiO 2 PCs on an ITO film was 1.9% higher than the GaN-based LED with a planar ITO film only. The output power of GaN-based LED with SiO2 PCs on an ITO film at 20mA was 17.1%, 26.5% and 125.3% higher than that of the GaN-based LEDs with the planar SiO2/ITO, planar ITO or Ni/Au surface layers, respectively.

原文English
頁(從 - 到)2152-2154
頁數3
期刊Physica Status Solidi (C) Current Topics in Solid State Physics
5
發行號6
DOIs
出版狀態Published - 2008
事件7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
持續時間: 16 9月 200721 9月 2007

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