Improvement of epitaxy gan quality using liquid-phase deposited nano-patterned sapphire substrates

Cheng Yu Hsieh*, Bo Wen Lin, Hsin Ju Cho, Bau Ming Wang, Nancy Chang, Yew-Chuhg Wu

*此作品的通信作者

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

A relatively simple and easy and inexpensive liquid-phase deposition (LPD) method is employed to introduce nanoscale silica hemispheres on sapphire substrates for fabricating a nano-patterned sapphire substrate (NPSS). Compared with GaN grown on sapphire without any pattern, the NPSS-GaN film is of much better quality as observed by scanning electron microscopy, transmission electron-microscopy, X-ray diffraction, cathodoluminescence, and photoluminescence. This is because GaN is initiated from the c-plane instead of the LPD-silica surface. In addition, many dislocations within the NPSS-GaN bend toward the patterns, or end at the GaN/void interfaces.

原文English
文章編號6330988
頁(從 - 到)2232-2234
頁數3
期刊IEEE Photonics Technology Letters
24
發行號24
DOIs
出版狀態Published - 10 12月 2012

指紋

深入研究「Improvement of epitaxy gan quality using liquid-phase deposited nano-patterned sapphire substrates」主題。共同形成了獨特的指紋。

引用此