摘要
Supercritical fluid (SCF) technology was proposed to improve the dielectric properties of electron-gun evaporated aluminum oxide (Al Ox) film in this work. The leakage current of Al Ox film deposited at room temperature was suppressed significantly from 10-4 to 10-10 A at a bias voltage of -20 V after the SCF treatment mixed with water and propyl alcohol. The evolution of the leakage conduction mechanism was confirmed theoretically from trap-assisted quantum tunneling to the Schottky emission process due to the reduction of electric traps in the Al Ox dielectric film. In addition, our work demonstrated the application of SCF-treated Al Ox gate dielectric to a pentacene-based thin-film transistor.
| 原文 | English |
|---|---|
| 頁（從 - 到） | H11-H13 |
| 頁數 | 3 |
| 期刊 | Electrochemical and Solid-State Letters |
| 卷 | 12 |
| 發行號 | 1 |
| DOIs | |
| 出版狀態 | Published - 2008 |