Improvement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELC

Chun Hao Tu*, Ting Chang Chang, Po-Tsun Liu, Che Yu Yang, Hsin Chou Liu, Wei Ren Chen, Yung Chun Wu, C. Y.Chun Ye Chang

*此作品的通信作者

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

The fluorine ion implantation applied to the polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated in this letter. Experimental results have shown that fluorine ion implantation effectively minimized the trap state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, and high ON/OFF current ratio. Furthermore, the fluorine ions tended to segregate at the interface between the gate oxide and poly-Si layers during the excimer laser annealing, even without the extra deposition of pad oxide on the poly-Si film. The presence of fluorine obviously enhanced electrical reliability of poly-Si TFTs.

原文English
頁(從 - 到)262-264
頁數3
期刊Ieee Electron Device Letters
27
發行號4
DOIs
出版狀態Published - 4月 2006

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