摘要
The fluorine ion implantation applied to the polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated in this letter. Experimental results have shown that fluorine ion implantation effectively minimized the trap state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, and high ON/OFF current ratio. Furthermore, the fluorine ions tended to segregate at the interface between the gate oxide and poly-Si layers during the excimer laser annealing, even without the extra deposition of pad oxide on the poly-Si film. The presence of fluorine obviously enhanced electrical reliability of poly-Si TFTs.
原文 | English |
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頁(從 - 到) | 262-264 |
頁數 | 3 |
期刊 | Ieee Electron Device Letters |
卷 | 27 |
發行號 | 4 |
DOIs | |
出版狀態 | Published - 4月 2006 |