Improvement in threshold of InGaNGaN quantum-well lasers by p -type modulation doping

Keyphrases

• P-type 100%
• Quantum Dot Lasers 100%
• Modulation Doping 100%
• Quantum Well 66%
• Threshold Current 66%
• Valence Band 33%
• Optical Properties 33%
• Doping Level 33%
• Impurities 33%
• Low Threshold Voltage 33%
• P-type Doping 33%
• Doping Concentration 33%
• Strain Effect 33%
• Diode Laser 33%
• Six-band 33%
• Calculation Results 33%
• Band Model 33%
• Single Quantum Well 33%
• Spill 33%
• Threshold Current Density 33%
• Double Quantum Well 33%
• Induced Defects 33%
• Modulation-doped 33%
• Cavity Loss 33%
• P-type Dopant 33%
• Optimized Threshold 33%
• Perfect Quality 33%

Physics

• Quantum Well Lasers 100%
• Modulation Doping 100%
• Quantum Wells 66%
• Semiconductor Laser 33%
• Spilling 33%
• Optical Property 33%

Engineering

• Quantum Well 100%
• Current Threshold 60%
• Dopants 20%
• Valence Band 20%
• Dopant Concentration 20%
• Threshold Current Density 20%
• Strain Effect 20%
• Doping Level 20%
• Induced Defect 20%
• Band Model 20%
• Cavity Loss 20%
• Discretization 20%