Improvement in the light conversion efficiency of silicon solar cells by pure hydrogen annealing

M. H. Xie, J. Y. Chen, Kien-Wen Sun*

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this report, the effects of pure hydrogen gas annealing on series resistance (Rs), shunt resistance (Rsh), open circuit voltage (Voc), short circuit current (Isc), fill factor, and efficiency were investigated systematically using standard, commercially available polysilicon solar cells. Improvements on the electrical characteristics, fill factors, and efficiency of the solar cells were observed after annealing by pure hydrogen gas at 350 °C for 15 min. In the best case, the conversion efficiency was raised by nearly 1% point. Judging from our experimental evidences, the improvement on cell performance could be mostly attributed to the reduction of Rs and improvement in Ag grid/emitter contact resistance in the cells during the annealing process.

原文English
頁(從 - 到)200-204
頁數5
期刊Materials Science in Semiconductor Processing
39
DOIs
出版狀態Published - 28 五月 2015

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