Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology

Chien I. Kuo; Heng-Tung Hsu; Chien Ying Wu; Edward Yi Chang; Yu Lin Chen; Wee Chin Lim

doi:10.1016/j.mee.2010.07.027

Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology

Chien I. Kuo^*, Heng-Tung Hsu, Chien Ying Wu, Edward Yi Chang, Yu Lin Chen, Wee Chin Lim

^*此作品的通信作者

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

Forty-nanometer InAs HEMT devices fabricated by two-step recess and Pt-buried gate were demonstrated for low-noise and low-power millimeter wave applications. The device exhibited a high transconductance of 1650 mS/mm at a drain voltage of 0.5 V. Improvement of the current-gain cutoff frequency from 395 GHz to 423 GHz was achieved with minimum noise figure below 2.5 dB up to 64 GHz at only 4.33mW DC power consumption level. Besides, the output conductance was decreased from 2400 mS/ mm to 325 mS/mm. These superior performances are attributed to mitigation of the short-channel effect through the proposed technology.

原文	English
頁（從 - 到）	2625-2628
頁數	4
期刊	Microelectronic Engineering
卷	87
發行號	12
DOIs	https://doi.org/10.1016/j.mee.2010.07.027
出版狀態	Published - 1 1月 2010

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@article{bc77d7ee6b734125be8153a91d6d9826,

title = "Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology",

abstract = "Forty-nanometer InAs HEMT devices fabricated by two-step recess and Pt-buried gate were demonstrated for low-noise and low-power millimeter wave applications. The device exhibited a high transconductance of 1650 mS/mm at a drain voltage of 0.5 V. Improvement of the current-gain cutoff frequency from 395 GHz to 423 GHz was achieved with minimum noise figure below 2.5 dB up to 64 GHz at only 4.33mW DC power consumption level. Besides, the output conductance was decreased from 2400 mS/ mm to 325 mS/mm. These superior performances are attributed to mitigation of the short-channel effect through the proposed technology.",

author = "Kuo, {Chien I.} and Heng-Tung Hsu and Wu, {Chien Ying} and Chang, {Edward Yi} and Chen, {Yu Lin} and Lim, {Wee Chin}",

year = "2010",

month = jan,

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doi = "10.1016/j.mee.2010.07.027",

language = "English",

volume = "87",

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TY - JOUR

T1 - Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology

AU - Kuo, Chien I.

AU - Hsu, Heng-Tung

AU - Wu, Chien Ying

AU - Chang, Edward Yi

AU - Chen, Yu Lin

AU - Lim, Wee Chin

PY - 2010/1/1

Y1 - 2010/1/1

N2 - Forty-nanometer InAs HEMT devices fabricated by two-step recess and Pt-buried gate were demonstrated for low-noise and low-power millimeter wave applications. The device exhibited a high transconductance of 1650 mS/mm at a drain voltage of 0.5 V. Improvement of the current-gain cutoff frequency from 395 GHz to 423 GHz was achieved with minimum noise figure below 2.5 dB up to 64 GHz at only 4.33mW DC power consumption level. Besides, the output conductance was decreased from 2400 mS/ mm to 325 mS/mm. These superior performances are attributed to mitigation of the short-channel effect through the proposed technology.

AB - Forty-nanometer InAs HEMT devices fabricated by two-step recess and Pt-buried gate were demonstrated for low-noise and low-power millimeter wave applications. The device exhibited a high transconductance of 1650 mS/mm at a drain voltage of 0.5 V. Improvement of the current-gain cutoff frequency from 395 GHz to 423 GHz was achieved with minimum noise figure below 2.5 dB up to 64 GHz at only 4.33mW DC power consumption level. Besides, the output conductance was decreased from 2400 mS/ mm to 325 mS/mm. These superior performances are attributed to mitigation of the short-channel effect through the proposed technology.

UR - http://www.scopus.com/inward/record.url?scp=77958028233&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2010.07.027

DO - 10.1016/j.mee.2010.07.027

M3 - Article

AN - SCOPUS:77958028233

SN - 0167-9317

VL - 87

SP - 2625

EP - 2628

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 12

ER -

Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology

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