Improvement in hole transporting ability and device performance of quantum dot light emitting diodes

Pei Chieh Chiu, Sheng Hsiung Yang*

*此作品的通信作者

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

In this research, we demonstrate a novel approach to improve the device performance of quantum dot light emitting diodes (QLEDs) by blending an additive BYK-P105 with poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) as the hole transport layer. In addition, for the first time, polyethylenimine ethoxylated (PEIE)-modified zinc oxide nanoparticles (ZnO NPs) as the electron transport layer were applied in regular-type QLEDs for achieving high device efficiency. A very high brightness of 139 909 cd m-2 and current efficiency of 27.2 cd A-1 were obtained for the optimized device with the configuration of ITO/PEDOT:PSS + BYK-P105/PVK/CdSe QDs/ZnO NPs/PEIE/LiF/Al that shows promising use in light-emitting applications.

原文English
頁(從 - 到)401-407
頁數7
期刊Nanoscale Advances
2
發行號1
DOIs
出版狀態Published - 1 1月 2020

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