Improvement in extraction efficiency of GaN-based light-emitting diodes with textured surface layer by natural lithography

Chiao Chih Yang, Ray-Hua Horng*, Chia En Lee, Wen Yu Lin, Kuan Fu Pan, Ying Yong Su, Dong Sing Wuu

*此作品的通信作者

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

In this study, p-side-up GaN-based light-emitting diodes (LEDs) with textured indium-tin oxide (ITO) or silicon dioxide (SiO2) surface layers were investigated by natural lithography using polystyrene spheres (PSs) as an etching mask. It was found that the ITO top layer provides better roughness than SiO2. Under the optimum surface treatment parameter, the roughnesses of textured ITO and SiO2 surface layers are 140 nm and 15 nm, respectively. The diameter of PSs in the textured ITO surface is still maintained at about 250-300 nm. Correspondingly, the size of PSs in the SiO2 surface is reduced to about 100 nm. The output powers of LEDs with textured ITO and SiO2 surfaces and conventional LEDs are 10.9, 9.5, and 8.5 mW at 20 mA, respectively. LEDs fabricated using the textured ITO surface produced an output power that exceeded that of planar-surface LEDs by about 28% at 20mA dc current. (c)2005 The Japan Society of Applied Physics.

原文English
頁(從 - 到)2525-2527
頁數3
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
44
發行號4 B
DOIs
出版狀態Published - 4月 2005

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