TY - JOUR
T1 - Improvement in efficiency droop of GaN-based lightemitting diodes by optimization of active regions
AU - Lin, Da Wei
AU - Wang, Chao Hsun
AU - Chang, Shih Pang
AU - Chiu, Ching Hsueh
AU - Lan, Yu-Pin
AU - Li, Zhen Yu
AU - Li, Jin Chai
AU - Lu, Tien-chang
AU - Wang, Shing Chung
AU - Kuo, Hao-Chung
PY - 2012
Y1 - 2012
N2 - In this paper, we propose several methods to improve the efficiency droop of GaNbased light-emitting diodes by optimization of active regions, such as alternative substrates, semipolar MQWs, insertion layer, graded-thickness MQWs, and graded-composition EBL.
AB - In this paper, we propose several methods to improve the efficiency droop of GaNbased light-emitting diodes by optimization of active regions, such as alternative substrates, semipolar MQWs, insertion layer, graded-thickness MQWs, and graded-composition EBL.
UR - http://www.scopus.com/inward/record.url?scp=84875140623&partnerID=8YFLogxK
U2 - 10.1364/ACP.2012.AS3F.4
DO - 10.1364/ACP.2012.AS3F.4
M3 - Conference article
AN - SCOPUS:84875140623
SN - 2162-108X
JO - Asia Communications and Photonics Conference, ACP
JF - Asia Communications and Photonics Conference, ACP
M1 - AS3F.4
T2 - 2012 Asia Communications and Photonics Conference, ACP 2012
Y2 - 7 November 2012 through 10 November 2012
ER -