Improved Thermal Stability and Stress Immunity in Highly Scalable Junctionless FETs Using Enhanced-Depletion Channels

Chien Liu; Chun-Hu Cheng; Ming Huei Lin; Yi-Jia Shih; Hung Wen Lin; Chia Chi Fan; Hsuan Han Chen; Wan-Hsin Chen; Chih Chieh Hsu; Bing Yang Shih; Yu Chien Chiu; Wu-Ching Chou; Hsiao-Hsuan Hsu; Chun-Yen Chang

doi:10.1149/2.0061812jss

Improved Thermal Stability and Stress Immunity in Highly Scalable Junctionless FETs Using Enhanced-Depletion Channels

Chien Liu, Chun-Hu Cheng, Ming Huei Lin, Yi-Jia Shih, Hung Wen Lin, Chia Chi Fan, Hsuan Han Chen, Wan-Hsin Chen, Chih Chieh Hsu, Bing Yang Shih, Yu Chien Chiu, Wu-Ching Chou, Hsiao-Hsuan Hsu, Chun-Yen Chang

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

In this work, we report a novel multi-PNPN-channel junctionless transistor with short channel length of 60nm. The multi-PNPN junctionless transistor exhibits the larger drive current of >1μA/μm, the steeper turn-on switching of 77 mV/decade, and the higher on/off current ratio of >10⁷ than the hybrid PN channel device under the same gate overdrive. The improved performance is mainly attributed to the enhanced depletion effect of multi-PNPN channel to optimize the electric field modification of surface p-channel. The stronger immunity to constant-voltage stress is also obtained for multi-PNPN channel due to the lower lateral electric field near drain side to reduce the impact ionization ratio.

原文	English
頁（從 - 到）	Q242-Q245
頁數	4
期刊	ECS Journal of Solid State Science and Technology
卷	7
發行號	12
DOIs	https://doi.org/10.1149/2.0061812jss
出版狀態	Published - 5 12月 2018

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10.1149/2.0061812jss

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Liu, C., Cheng, C.-H., Lin, M. H., Shih, Y.-J., Lin, H. W., Fan, C. C., Chen, H. H., Chen, W.-H., Hsu, C. C., Shih, B. Y., Chiu, Y. C., Chou, W.-C., Hsu, H.-H., & Chang, C.-Y. (2018). Improved Thermal Stability and Stress Immunity in Highly Scalable Junctionless FETs Using Enhanced-Depletion Channels. ECS Journal of Solid State Science and Technology, 7(12), Q242-Q245. https://doi.org/10.1149/2.0061812jss

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title = "Improved Thermal Stability and Stress Immunity in Highly Scalable Junctionless FETs Using Enhanced-Depletion Channels",

abstract = "In this work, we report a novel multi-PNPN-channel junctionless transistor with short channel length of 60nm. The multi-PNPN junctionless transistor exhibits the larger drive current of >1μA/μm, the steeper turn-on switching of 77 mV/decade, and the higher on/off current ratio of >107 than the hybrid PN channel device under the same gate overdrive. The improved performance is mainly attributed to the enhanced depletion effect of multi-PNPN channel to optimize the electric field modification of surface p-channel. The stronger immunity to constant-voltage stress is also obtained for multi-PNPN channel due to the lower lateral electric field near drain side to reduce the impact ionization ratio.",

keywords = "THIN-FILM-TRANSISTOR; MOBILITY",

author = "Chien Liu and Chun-Hu Cheng and Lin, {Ming Huei} and Yi-Jia Shih and Lin, {Hung Wen} and Fan, {Chia Chi} and Chen, {Hsuan Han} and Wan-Hsin Chen and Hsu, {Chih Chieh} and Shih, {Bing Yang} and Chiu, {Yu Chien} and Wu-Ching Chou and Hsiao-Hsuan Hsu and Chun-Yen Chang",

year = "2018",

month = dec,

day = "5",

doi = "10.1149/2.0061812jss",

language = "English",

volume = "7",

pages = "Q242--Q245",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society Inc.",

number = "12",

}

Liu, C, Cheng, C-H, Lin, MH, Shih, Y-J, Lin, HW, Fan, CC, Chen, HH, Chen, W-H, Hsu, CC, Shih, BY, Chiu, YC, Chou, W-C, Hsu, H-H & Chang, C-Y 2018, 'Improved Thermal Stability and Stress Immunity in Highly Scalable Junctionless FETs Using Enhanced-Depletion Channels', ECS Journal of Solid State Science and Technology, 卷 7, 編號 12, 頁 Q242-Q245. https://doi.org/10.1149/2.0061812jss

TY - JOUR

T1 - Improved Thermal Stability and Stress Immunity in Highly Scalable Junctionless FETs Using Enhanced-Depletion Channels

AU - Liu, Chien

AU - Cheng, Chun-Hu

AU - Lin, Ming Huei

AU - Shih, Yi-Jia

AU - Lin, Hung Wen

AU - Fan, Chia Chi

AU - Chen, Hsuan Han

AU - Chen, Wan-Hsin

AU - Hsu, Chih Chieh

AU - Shih, Bing Yang

AU - Chiu, Yu Chien

AU - Chou, Wu-Ching

AU - Hsu, Hsiao-Hsuan

AU - Chang, Chun-Yen

PY - 2018/12/5

Y1 - 2018/12/5

N2 - In this work, we report a novel multi-PNPN-channel junctionless transistor with short channel length of 60nm. The multi-PNPN junctionless transistor exhibits the larger drive current of >1μA/μm, the steeper turn-on switching of 77 mV/decade, and the higher on/off current ratio of >107 than the hybrid PN channel device under the same gate overdrive. The improved performance is mainly attributed to the enhanced depletion effect of multi-PNPN channel to optimize the electric field modification of surface p-channel. The stronger immunity to constant-voltage stress is also obtained for multi-PNPN channel due to the lower lateral electric field near drain side to reduce the impact ionization ratio.

AB - In this work, we report a novel multi-PNPN-channel junctionless transistor with short channel length of 60nm. The multi-PNPN junctionless transistor exhibits the larger drive current of >1μA/μm, the steeper turn-on switching of 77 mV/decade, and the higher on/off current ratio of >107 than the hybrid PN channel device under the same gate overdrive. The improved performance is mainly attributed to the enhanced depletion effect of multi-PNPN channel to optimize the electric field modification of surface p-channel. The stronger immunity to constant-voltage stress is also obtained for multi-PNPN channel due to the lower lateral electric field near drain side to reduce the impact ionization ratio.

KW - THIN-FILM-TRANSISTOR; MOBILITY

UR - http://www.scopus.com/inward/record.url?scp=85078558782&partnerID=8YFLogxK

U2 - 10.1149/2.0061812jss

DO - 10.1149/2.0061812jss

M3 - Article

AN - SCOPUS:85078558782

SN - 2162-8769

VL - 7

SP - Q242-Q245

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 12

ER -

Improved Thermal Stability and Stress Immunity in Highly Scalable Junctionless FETs Using Enhanced-Depletion Channels

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