摘要
This article reports that the enhanced forward gate bias time-dependent dielectric breakdown (TDDB) reliability and interface quality are achieved in 5-nm ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) technologies by using the NH 3 plasma interfacial layer (IL) treatment and microwave annealing (MWA). An orthorhombic crystalline phase is observed in the annealed HZO film with NH 3 plasma IL treatment and MWA, and NH 3 plasma IL treatment can suppress Hf/Zr interdiffusion. Metal-oxide-semiconductor capacitors (MOSCAPs) subjected to NH 3 plasma IL treatment and 2100-W MWA also have a higher extrapolated operating voltage for a ten-year lifetime at 0.01% failure and lower interface state density ( Dit ) compared to the devices subjected to only rapid thermal annealing (RTA) at 600 °C. Therefore, NH 3 plasma treatment and MWA are effective for improving the TDDB reliability and interface quality of the ultrathin ferroelectric HZO.
原文 | English |
---|---|
頁(從 - 到) | 1581-1585 |
頁數 | 5 |
期刊 | IEEE Transactions on Electron Devices |
卷 | 67 |
發行號 | 4 |
DOIs | |
出版狀態 | Published - 4月 2020 |