Improved Synaptic Characteristics in Bilayer Memristor by Post-Oxide Deposition Annealing for Pattern Recognition

Dayanand Kumar*, Yi Rong Huang, Pratibha Pal, Aftab Saleem, Amit Singh, Hoonkyung Lee, Yeong Her Wang, Tseung Yuen Tseng

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

We present highly stable bilayer HfO2/TiO2 memristive synapse for neuromorphic computing applications. The memristive synapse shows repetitive 220 Long-term potentiation and depression cycles without any breakdown with total number of 220k pulses. The nonlinear values of potentiation and depression are 2.52 and -2.63, respectively with 1000 conductance pulses (500 pulses of potentiation and 500 pulses of depression). The experimental data of potentiation and depression was used to train HNN for pattern recognition of 28×28 pixels comprising 784 synapses. In 16 iterations, the HNN can be successfully trained to identify the input image with a training accuracy of about 97%. Moreover, the device has good retention (104 s) at 120 °C. These excellent synaptic characteristics of annealed device allows it for artificial intelligence systems in near future.

原文English
主出版物標題2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781665409230
DOIs
出版狀態Published - 2022
事件2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, Taiwan
持續時間: 18 4月 202221 4月 2022

出版系列

名字2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
國家/地區Taiwan
城市Hsinchu
期間18/04/2221/04/22

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