Improved scalability of high-k gate dielectrics by using hf-aluminates

Tuo-Hung Hou*, J. Gutt, C. Lim, S. Marcus, C. Pomarede, E. Shero, H. De Warrd, C. Werkhoven, M. Gardner, R. W. Murto, H. R. Huff

*此作品的通信作者

研究成果: Paper同行評審

摘要

To satisfy the urgent need for suitable high-k dielectrics with scalability down to sub nm EOT, ALCVD TM HfO 2 and Hf-Aluminates were studied in this work. The scalability of ALCVD HfO 2 is limited by its high defect density and by the interface reaction with the conventional poly-Si gate process. The high defect density with thin HfO 2 dielectrics results in the significant yield loss in the larger devices, and the interface reaction with the poly-Si gate process makes the EOT thicker. Therefore, EOT scaling of ALCVD HfO 2 can be very challenging. In contrast, ALCVD Hf-Aluminates have moderate dielectric constant, low defect density and minimal EOT increase in the poly-Si gate process due to the Al incorporation in the bottom interfacial layer. They become attractive high-k dielectrics with enhanced scalability toward sub nm EOT application.

原文English
頁面141-148
頁數8
出版狀態Published - 10月 2002
事件Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues - Salt Lake City, UT, United States
持續時間: 20 10月 200224 10月 2002

Conference

ConferencePhysics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues
國家/地區United States
城市Salt Lake City, UT
期間20/10/0224/10/02

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