Improved retention characteristic in polycrystalline silicon-oxide-hafnium oxide-oxide-silicon-type nonvolatile memory with robust tunnel oxynitride

Chih Ren Hsieh, Chiung Hui Lai, Bo Chun Lin, Yuan Kai Zheng, Jen Chung Lou, Kuo-Jui Lin

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

指紋

深入研究「Improved retention characteristic in polycrystalline silicon-oxide-hafnium oxide-oxide-silicon-type nonvolatile memory with robust tunnel oxynitride」主題。共同形成了獨特的指紋。

Engineering & Materials Science

Physics & Astronomy