Improved rear-side passivation by atomic layer deposition A 2 O 3 /SiN x stack layers for high V OC industrial p-type silicon solar cells

Je Wei Lin, Yi Yang Chen, Jon Yiew Gan, Wei Ping Hseih, Chen Hsu Du, Tien-Sheng Chao

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

This research develops high open-circuit voltage (VOC)p-type industrial screen-printed silicon solar cells using improved rear surface passivation. It shows a significant improvement in the minority carrier lifetime by low temperature (< 450° C) thermal atomic layer deposition of Al 2 O 3 layers and plasma-enhanced chemical vapor deposition of SiN x passivation layers. An increase in the V OC and the short-circuit current (J SC ) due to an improved long-wavelength response are also demonstrated. With the optimized stack layers, a high efficiency of 19.2% across a large area (156 cm 2 ) is seen. Furthermore, the rear-side passivation scheme can be easily integrated into the conventional screen-printed process. This is very promising for in-line solar cell manufacturing.

原文English
文章編號6558507
頁(從 - 到)1163-1165
頁數3
期刊IEEE Electron Device Letters
34
發行號9
DOIs
出版狀態Published - 3 9月 2013

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