The InGaN/sapphire-based photovoltaic (PV) cells with Al 0.14 Ga 0.86 N/In 0.21 Ga 0.79 N superlattice structures that serve as absorption layers were grown on patterned sapphire substrates (PSSs). Under global air-mass 1.5 conditions, the shortcircuit current density, the open-circuit voltage, and the fill factor obtained from the PV cells were 1.21 mA/cm 2 , 2.18 V, and 0.65, respectively, corresponding to a conversion efficiency of 1.71%. Compared with PV devices grown on flat sapphire substrates, the photocurrent of PSS-grown PV devices was enhanced by 26%. The improved PV performance was attributable to the positive effects of the PSS on the material quality.
|頁（從 - 到）||536-538|
|期刊||IEEE Electron Device Letters|
|出版狀態||Published - 1 4月 2011|