Improved power conversion efficiency of InGaN photovoltaic devices grown on patterned sapphire substrates

C. C. Yang; J. K. Sheu; Cheng-Huang Kuo; M. S. Huang; S. J. Tu; F. W. Huang; M. L. Lee; Yu Hsiang Yeh; X. W. Liang; W. C. Lai

doi:10.1109/LED.2011.2107725

Improved power conversion efficiency of InGaN photovoltaic devices grown on patterned sapphire substrates

C. C. Yang, J. K. Sheu, Cheng-Huang Kuo, M. S. Huang, S. J. Tu, F. W. Huang, M. L. Lee, Yu Hsiang Yeh, X. W. Liang, W. C. Lai

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摘要

The InGaN/sapphire-based photovoltaic (PV) cells with Al _0.14Ga_0.86N/In_0.21Ga_0.79N superlattice structures that serve as absorption layers were grown on patterned sapphire substrates (PSSs). Under global air-mass 1.5 conditions, the shortcircuit current density, the open-circuit voltage, and the fill factor obtained from the PV cells were 1.21 mA/cm², 2.18 V, and 0.65, respectively, corresponding to a conversion efficiency of 1.71%. Compared with PV devices grown on flat sapphire substrates, the photocurrent of PSS-grown PV devices was enhanced by 26%. The improved PV performance was attributable to the positive effects of the PSS on the material quality.

原文	English
文章編號	5719623
頁（從 - 到）	536-538
頁數	3
期刊	Ieee Electron Device Letters
卷	32
發行號	4
DOIs	https://doi.org/10.1109/LED.2011.2107725
出版狀態	Published - 4月 2011

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title = "Improved power conversion efficiency of InGaN photovoltaic devices grown on patterned sapphire substrates",

abstract = "The InGaN/sapphire-based photovoltaic (PV) cells with Al 0.14Ga0.86N/In0.21Ga0.79N superlattice structures that serve as absorption layers were grown on patterned sapphire substrates (PSSs). Under global air-mass 1.5 conditions, the shortcircuit current density, the open-circuit voltage, and the fill factor obtained from the PV cells were 1.21 mA/cm2, 2.18 V, and 0.65, respectively, corresponding to a conversion efficiency of 1.71%. Compared with PV devices grown on flat sapphire substrates, the photocurrent of PSS-grown PV devices was enhanced by 26%. The improved PV performance was attributable to the positive effects of the PSS on the material quality.",

keywords = "InGaN, patterned sapphire substrate (PSS), photovoltaic (PV)",

author = "Yang, {C. C.} and Sheu, {J. K.} and Cheng-Huang Kuo and Huang, {M. S.} and Tu, {S. J.} and Huang, {F. W.} and Lee, {M. L.} and Yeh, {Yu Hsiang} and Liang, {X. W.} and Lai, {W. C.}",

year = "2011",

month = apr,

doi = "10.1109/LED.2011.2107725",

language = "English",

volume = "32",

pages = "536--538",

journal = "Ieee Electron Device Letters",

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T1 - Improved power conversion efficiency of InGaN photovoltaic devices grown on patterned sapphire substrates

AU - Yang, C. C.

AU - Sheu, J. K.

AU - Kuo, Cheng-Huang

AU - Huang, M. S.

AU - Tu, S. J.

AU - Huang, F. W.

AU - Lee, M. L.

AU - Yeh, Yu Hsiang

AU - Liang, X. W.

AU - Lai, W. C.

PY - 2011/4

Y1 - 2011/4

N2 - The InGaN/sapphire-based photovoltaic (PV) cells with Al 0.14Ga0.86N/In0.21Ga0.79N superlattice structures that serve as absorption layers were grown on patterned sapphire substrates (PSSs). Under global air-mass 1.5 conditions, the shortcircuit current density, the open-circuit voltage, and the fill factor obtained from the PV cells were 1.21 mA/cm2, 2.18 V, and 0.65, respectively, corresponding to a conversion efficiency of 1.71%. Compared with PV devices grown on flat sapphire substrates, the photocurrent of PSS-grown PV devices was enhanced by 26%. The improved PV performance was attributable to the positive effects of the PSS on the material quality.

AB - The InGaN/sapphire-based photovoltaic (PV) cells with Al 0.14Ga0.86N/In0.21Ga0.79N superlattice structures that serve as absorption layers were grown on patterned sapphire substrates (PSSs). Under global air-mass 1.5 conditions, the shortcircuit current density, the open-circuit voltage, and the fill factor obtained from the PV cells were 1.21 mA/cm2, 2.18 V, and 0.65, respectively, corresponding to a conversion efficiency of 1.71%. Compared with PV devices grown on flat sapphire substrates, the photocurrent of PSS-grown PV devices was enhanced by 26%. The improved PV performance was attributable to the positive effects of the PSS on the material quality.

KW - InGaN

KW - patterned sapphire substrate (PSS)

KW - photovoltaic (PV)

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U2 - 10.1109/LED.2011.2107725

DO - 10.1109/LED.2011.2107725

M3 - Article

AN - SCOPUS:79953058419

SN - 0741-3106

VL - 32

SP - 536

EP - 538

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 4

M1 - 5719623

ER -

Improved power conversion efficiency of InGaN photovoltaic devices grown on patterned sapphire substrates

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