@inproceedings{a5e88769fa0e46cab899784a8298ff70,
title = "Improved performance of NDLC poly-Si nanowire TFTs by using Ni-gettering",
abstract = "Nickel contamination inside nickel-metal induced lateral crystallization polycrystalline silicon is an issue to fabricate high performance nanowire thin film transistors. The phosphorous-doped α-Si/chem-SiO2 films were employed as Ni-gettering layers to investigate effect of Ni residues on the performance of NILC poly-Si NW TFTs. It was found that the performance of NW TFTs was greatly improved after Ni-gettering process.",
author = "Wang, {Bau Ming} and Yang, {Tzu Ming} and Yew-Chuhg Wu and Su, {Chun Jung} and Horng-Chih Lin",
year = "2010",
month = dec,
day = "1",
doi = "10.1149/1.3481233",
language = "English",
isbn = "9781566778244",
series = "ECS Transactions",
number = "5",
pages = "169--172",
booktitle = "Thin Film Transistors 10, TFT 10",
edition = "5",
note = "10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting ; Conference date: 11-10-2010 Through 15-10-2010",
}