Nickel contamination inside nickel-metal induced lateral crystallization polycrystalline silicon is an issue to fabricate high performance nanowire thin film transistors. The phosphorous-doped α-Si/chem-SiO2 films were employed as Ni-gettering layers to investigate effect of Ni residues on the performance of NILC poly-Si NW TFTs. It was found that the performance of NW TFTs was greatly improved after Ni-gettering process.
|主出版物標題||Thin Film Transistors 10, TFT 10|
|出版狀態||Published - 1 12月 2010|
|事件||10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States|
持續時間: 11 10月 2010 → 15 10月 2010
|Conference||10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting|
|城市||Las Vegas, NV|
|期間||11/10/10 → 15/10/10|