Improved performance of MIC poly-Si TFTs using Driven-in nickel Induced Crystallization (DIC) with Cap SiO2 by F implantation

Ming Hui Lai; Yew-Chuhg Wu; Teng Fu Tung; Hung Yu Wu

doi:10.1149/1.3375628

Improved performance of MIC poly-Si TFTs using Driven-in nickel Induced Crystallization (DIC) with Cap SiO₂ by F implantation

Ming Hui Lai^*, Yew-Chuhg Wu, Teng Fu Tung, Hung Yu Wu

^*此作品的通信作者

材料科學與工程學系

研究成果: Conference contribution › 同行評審

摘要

A cap oxide layer was employed to substantially decrease nickel residues and passivate the trap states of the devices. F⁺ implantation was used to drive Ni in α-Si layer to induce crystallization (DIC) process with cap oxide to reduce Ni concentration and minimize the trap-state density. As a result, DIC-TFT with cap oxide exhibit higher field-effect mobility, lower subthreshold slope, lower threshold voltage, higher on/off current ratio, and lower trap-state density (N_t) compared with conventional MIC TFTs.

原文	English
主出版物標題	Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6
主出版物子標題	New Materials, Processes, and Equipment
頁面	405-407
頁數	3
版本	1
DOIs	https://doi.org/10.1149/1.3375628
出版狀態	Published - 30 12月 2010
事件	Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting - Vancouver, BC, Canada 持續時間: 26 4月 2010 → 27 4月 2010

出版系列

名字	ECS Transactions
號碼	1
卷	28
ISSN（列印）	1938-5862
ISSN（電子）	1938-6737

Conference

Conference	Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting
國家/地區	Canada
城市	Vancouver, BC
期間	26/04/10 → 27/04/10

存取文件

10.1149/1.3375628

其它文件與鏈接

Link to publication in Scopus

引用此

Lai, M. H., Wu, Y-C., Tung, T. F., & Wu, H. Y. (2010). Improved performance of MIC poly-Si TFTs using Driven-in nickel Induced Crystallization (DIC) with Cap SiO₂ by F implantation. 於 Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment (1 編輯, 頁 405-407). (ECS Transactions; 卷 28, 編號 1). https://doi.org/10.1149/1.3375628

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title = "Improved performance of MIC poly-Si TFTs using Driven-in nickel Induced Crystallization (DIC) with Cap SiO2 by F implantation",

abstract = "A cap oxide layer was employed to substantially decrease nickel residues and passivate the trap states of the devices. F+ implantation was used to drive Ni in α-Si layer to induce crystallization (DIC) process with cap oxide to reduce Ni concentration and minimize the trap-state density. As a result, DIC-TFT with cap oxide exhibit higher field-effect mobility, lower subthreshold slope, lower threshold voltage, higher on/off current ratio, and lower trap-state density (Nt) compared with conventional MIC TFTs.",

author = "Lai, {Ming Hui} and Yew-Chuhg Wu and Tung, {Teng Fu} and Wu, {Hung Yu}",

year = "2010",

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Lai, MH, Wu, Y-C, Tung, TF & Wu, HY 2010, Improved performance of MIC poly-Si TFTs using Driven-in nickel Induced Crystallization (DIC) with Cap SiO₂ by F implantation. 於 Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1 edn, ECS Transactions, 編號 1, 卷 28, 頁 405-407, Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting, Vancouver, BC, Canada, 26/04/10. https://doi.org/10.1149/1.3375628

Improved performance of MIC poly-Si TFTs using Driven-in nickel Induced Crystallization (DIC) with Cap SiO₂ by F implantation. / Lai, Ming Hui; Wu, Yew-Chuhg; Tung, Teng Fu 等.
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1. 編輯 2010. p. 405-407 (ECS Transactions; 卷 28, 編號 1).

研究成果: Conference contribution › 同行評審

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AU - Wu, Hung Yu

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N2 - A cap oxide layer was employed to substantially decrease nickel residues and passivate the trap states of the devices. F+ implantation was used to drive Ni in α-Si layer to induce crystallization (DIC) process with cap oxide to reduce Ni concentration and minimize the trap-state density. As a result, DIC-TFT with cap oxide exhibit higher field-effect mobility, lower subthreshold slope, lower threshold voltage, higher on/off current ratio, and lower trap-state density (Nt) compared with conventional MIC TFTs.

AB - A cap oxide layer was employed to substantially decrease nickel residues and passivate the trap states of the devices. F+ implantation was used to drive Ni in α-Si layer to induce crystallization (DIC) process with cap oxide to reduce Ni concentration and minimize the trap-state density. As a result, DIC-TFT with cap oxide exhibit higher field-effect mobility, lower subthreshold slope, lower threshold voltage, higher on/off current ratio, and lower trap-state density (Nt) compared with conventional MIC TFTs.

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