Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator

Le Trung Hieu; Heng Tung Hsu; Debashis Panda; Ching Ting Lee; Chun Hsiung Lin; Edward Yi Chang

doi:10.1149/2162-8777/acbb27

Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator

Le Trung Hieu^*, Heng Tung Hsu, Debashis Panda, Ching Ting Lee, Chun Hsiung Lin, Edward Yi Chang^*

^*此作品的通信作者

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

An improvement in off-state leakage current and cutoff frequency for AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. Raman spectroscopy confirms the low stress of GaN heterostructure grown on a silicon-on-insulator (SOI) substrate. The HEMT devices on SOI substrate show lower knee voltage (V_knee) and on-resistance (R_ON) compared to those on the high-resistive silicon (HR-Si) substrates by 20.8% and 30.4%, respectively. Off-state leakage current is reduced to 10⁻⁷ A mm⁻¹, and the cutoff frequency (f _t) is increased by 19.2% as compared to HR-Si substrate. Thus, the GaN/SOI technology is proven to be a potential technology for high-frequency communication applications.

原文	English
文章編號	025001
期刊	ECS Journal of Solid State Science and Technology
卷	12
發行號	2
DOIs	https://doi.org/10.1149/2162-8777/acbb27
出版狀態	Published - 2月 2023

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10.1149/2162-8777/acbb27

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title = "Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator",

abstract = "An improvement in off-state leakage current and cutoff frequency for AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. Raman spectroscopy confirms the low stress of GaN heterostructure grown on a silicon-on-insulator (SOI) substrate. The HEMT devices on SOI substrate show lower knee voltage (Vknee) and on-resistance (RON) compared to those on the high-resistive silicon (HR-Si) substrates by 20.8% and 30.4%, respectively. Off-state leakage current is reduced to 10−7 A mm−1, and the cutoff frequency (f t ) is increased by 19.2% as compared to HR-Si substrate. Thus, the GaN/SOI technology is proven to be a potential technology for high-frequency communication applications.",

author = "{Trung Hieu}, Le and Hsu, {Heng Tung} and Debashis Panda and Lee, {Ching Ting} and Lin, {Chun Hsiung} and Chang, {Edward Yi}",

note = "Publisher Copyright: {\textcopyright} 2023 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited.",

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doi = "10.1149/2162-8777/acbb27",

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T1 - Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator

AU - Trung Hieu, Le

AU - Hsu, Heng Tung

AU - Panda, Debashis

AU - Lee, Ching Ting

AU - Lin, Chun Hsiung

AU - Chang, Edward Yi

PY - 2023/2

Y1 - 2023/2

N2 - An improvement in off-state leakage current and cutoff frequency for AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. Raman spectroscopy confirms the low stress of GaN heterostructure grown on a silicon-on-insulator (SOI) substrate. The HEMT devices on SOI substrate show lower knee voltage (Vknee) and on-resistance (RON) compared to those on the high-resistive silicon (HR-Si) substrates by 20.8% and 30.4%, respectively. Off-state leakage current is reduced to 10−7 A mm−1, and the cutoff frequency (f t ) is increased by 19.2% as compared to HR-Si substrate. Thus, the GaN/SOI technology is proven to be a potential technology for high-frequency communication applications.

AB - An improvement in off-state leakage current and cutoff frequency for AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. Raman spectroscopy confirms the low stress of GaN heterostructure grown on a silicon-on-insulator (SOI) substrate. The HEMT devices on SOI substrate show lower knee voltage (Vknee) and on-resistance (RON) compared to those on the high-resistive silicon (HR-Si) substrates by 20.8% and 30.4%, respectively. Off-state leakage current is reduced to 10−7 A mm−1, and the cutoff frequency (f t ) is increased by 19.2% as compared to HR-Si substrate. Thus, the GaN/SOI technology is proven to be a potential technology for high-frequency communication applications.

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U2 - 10.1149/2162-8777/acbb27

DO - 10.1149/2162-8777/acbb27

M3 - Article

AN - SCOPUS:85148887364

SN - 2162-8769

VL - 12

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 2

M1 - 025001

ER -

Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator

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