Improved Modulation Bandwidth of Blue Mini-LEDs by Atomic-Layer Deposition Sidewall Passivation

Shou Qiang Lai; Ting Wei Lu; Su Hui Lin; Yi Lin; Guo Chun Lin; Jian Hua Pan; Yue Long Zhuang; Yi Jun Lu; Yue Lin; Hao Chung Kuo; Zhong Chen; Ting Zhu Wu

doi:10.1109/TED.2022.3188738

Improved Modulation Bandwidth of Blue Mini-LEDs by Atomic-Layer Deposition Sidewall Passivation

Shou Qiang Lai, Ting Wei Lu, Su Hui Lin, Yi Lin, Guo Chun Lin, Jian Hua Pan, Yue Long Zhuang, Yi Jun Lu, Yue Lin, Hao Chung Kuo^*, Zhong Chen, Ting Zhu Wu^*

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

16 引文斯高帕斯（Scopus）

摘要

By adopting atomic layer deposition (ALD) sidewall passivation, the electroluminescence (EL) and communication performances of mini-light emitting diodes (mini-LEDs) of different sizes were improved. In particular, the most significant improvement in the electroluminescence properties of the external quantum efficiency (EQE) (a 7.2% increase), leakage current, and the communication properties of the modulation bandwidth (a 20% increase) transmission rate and bit error rate (BER) was found in the smallest mini-LEDs (80 μm × 120 μ m). According to the results of time-resolved photoluminescence (TRPL) measurements, the carrier lifetime of the samples can be affected by both the size and ALD sidewall passivation. In addition, the effects of ALD sidewall passivation for visible-light communication (VLC) were demonstrated.

原文	English
頁（從 - 到）	4936-4943
頁數	8
期刊	IEEE Transactions on Electron Devices
卷	69
發行號	9
DOIs	https://doi.org/10.1109/TED.2022.3188738
出版狀態	Published - 1 9月 2022

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10.1109/TED.2022.3188738

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title = "Improved Modulation Bandwidth of Blue Mini-LEDs by Atomic-Layer Deposition Sidewall Passivation",

abstract = "By adopting atomic layer deposition (ALD) sidewall passivation, the electroluminescence (EL) and communication performances of mini-light emitting diodes (mini-LEDs) of different sizes were improved. In particular, the most significant improvement in the electroluminescence properties of the external quantum efficiency (EQE) (a 7.2% increase), leakage current, and the communication properties of the modulation bandwidth (a 20% increase) transmission rate and bit error rate (BER) was found in the smallest mini-LEDs (80 μm × 120 μ m). According to the results of time-resolved photoluminescence (TRPL) measurements, the carrier lifetime of the samples can be affected by both the size and ALD sidewall passivation. In addition, the effects of ALD sidewall passivation for visible-light communication (VLC) were demonstrated.",

keywords = "Electroluminescent devices, light emitting diodes (LEDs), optoelectronic devices, semiconductor diodes, visible-light communication (VLC)",

author = "Lai, {Shou Qiang} and Lu, {Ting Wei} and Lin, {Su Hui} and Yi Lin and Lin, {Guo Chun} and Pan, {Jian Hua} and Zhuang, {Yue Long} and Lu, {Yi Jun} and Yue Lin and Kuo, {Hao Chung} and Zhong Chen and Wu, {Ting Zhu}",

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doi = "10.1109/TED.2022.3188738",

language = "English",

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T1 - Improved Modulation Bandwidth of Blue Mini-LEDs by Atomic-Layer Deposition Sidewall Passivation

AU - Lai, Shou Qiang

AU - Lu, Ting Wei

AU - Lin, Su Hui

AU - Lin, Yi

AU - Lin, Guo Chun

AU - Pan, Jian Hua

AU - Zhuang, Yue Long

AU - Lu, Yi Jun

AU - Lin, Yue

AU - Kuo, Hao Chung

AU - Chen, Zhong

AU - Wu, Ting Zhu

PY - 2022/9/1

Y1 - 2022/9/1

N2 - By adopting atomic layer deposition (ALD) sidewall passivation, the electroluminescence (EL) and communication performances of mini-light emitting diodes (mini-LEDs) of different sizes were improved. In particular, the most significant improvement in the electroluminescence properties of the external quantum efficiency (EQE) (a 7.2% increase), leakage current, and the communication properties of the modulation bandwidth (a 20% increase) transmission rate and bit error rate (BER) was found in the smallest mini-LEDs (80 μm × 120 μ m). According to the results of time-resolved photoluminescence (TRPL) measurements, the carrier lifetime of the samples can be affected by both the size and ALD sidewall passivation. In addition, the effects of ALD sidewall passivation for visible-light communication (VLC) were demonstrated.

AB - By adopting atomic layer deposition (ALD) sidewall passivation, the electroluminescence (EL) and communication performances of mini-light emitting diodes (mini-LEDs) of different sizes were improved. In particular, the most significant improvement in the electroluminescence properties of the external quantum efficiency (EQE) (a 7.2% increase), leakage current, and the communication properties of the modulation bandwidth (a 20% increase) transmission rate and bit error rate (BER) was found in the smallest mini-LEDs (80 μm × 120 μ m). According to the results of time-resolved photoluminescence (TRPL) measurements, the carrier lifetime of the samples can be affected by both the size and ALD sidewall passivation. In addition, the effects of ALD sidewall passivation for visible-light communication (VLC) were demonstrated.

KW - Electroluminescent devices

KW - light emitting diodes (LEDs)

KW - optoelectronic devices

KW - semiconductor diodes

KW - visible-light communication (VLC)

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

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Improved Modulation Bandwidth of Blue Mini-LEDs by Atomic-Layer Deposition Sidewall Passivation

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