Improved memory window for Ge nanocrystals embedded in SiON layer

Chun Hao Tu*, Ting Chang Chang, Po-Tsun Liu, Hsin Chou Liu, Simon M. Sze, Chun Yen Chang

*此作品的通信作者

研究成果: Article同行評審

31 引文 斯高帕斯(Scopus)

摘要

The formation of germanium (Ge) nanocrystals embedded in silicon oxygen nitride (SiON) is proposed for charge storage elements in this work. The Ge nanocrystals can be nucleated after the oxidation process of silicon germanium nitride (SiGeN) layer at high temperatures. Compared to the control samples of Ge nanocrystals/ Si O2 Si structure and SiONSi stack memory, the proposed Ge nanocrystals/ SiONSi memory obtained superior memory window, even larger than the typical sum of both. It is considered that the extra interface trap states between Ge and SiON film were generated as Ge nanocrystals were embedded in SiON layer.

原文English
文章編號162105
頁數3
期刊Applied Physics Letters
89
發行號16
DOIs
出版狀態Published - 16 10月 2006

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