摘要
In this paper we investigated the effect of Cu bonding quality on inter-level via structural reliability for 3D manufacturing applications. We developed a Cu bond pad structure and fabrication process for improved bonding quality by recessing oxides using a combination of SiO2 CMP process and dilute HF wet etching. In addition, in order to achieve improved wafer-level bonding, we introduced a seal design concept that prevents corrosion and provides extra mechanical support. Demonstrations of these concepts and processes prove the feasibility of reliable and manufacturable 3D integrated circuits and packages.
原文 | English |
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頁面 | 195-202 |
頁數 | 8 |
出版狀態 | Published - 9月 2006 |
事件 | 23rd International VLSI Multilevel Interconnection Conference, VMIC 2006 - Fremont, CA, 美國 持續時間: 26 9月 2006 → 28 9月 2006 |
Conference
Conference | 23rd International VLSI Multilevel Interconnection Conference, VMIC 2006 |
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國家/地區 | 美國 |
城市 | Fremont, CA |
期間 | 26/09/06 → 28/09/06 |